Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance

Abstract

Organic memristive devices are promising elements to be used in memory tasks, neuromorphic systems, and bioelectronics as hardware analogs of synapses. Among other materials, small molecules are considered in this field as candidates with more adjustable properties and fine chemical structures. Herein, the first organic memristive device based on benzothieno[3,2‐b][1]‐benzothiophene (BTBT) siloxane dimer is reported. The device resistance programming by voltage pulses with various control parameters is demonstrated: amplitude, frequency, and pulse duty cycle. It is proved that the device has at least four different resistive states in each case. In addition, the device shows 2.5 × 104 cycles of sustainable operation in the endurance test with ROFF/RON ratio exceeding 5.

Modulation of polyaniline memristive device switching voltage by nucleotide-free analogue of vitamin B12

“…Organic neuromorphic devices are usually based either on polymers or organic small molecules [22,23], and employ various switching mechanisms, including metal filaments formation [24], electrochemical switching [25], and phase transition [26]. Polyaniline (PANI) stands out among other conductive polymers due to its high conductivity and significant switching ratio between resistive states [27].…”

Multi-Terminal Nonwoven Stochastic Memristive Devices Based on Polyamide-6 and Polyaniline for Neuromorphic Computing

“…Organic memristive devices can be produced with the use of different materials such as polyaniline (PANI) [ 5 ], oligo- [ 19 ] and polythiophenes [ 20 , 21 ] and small molecules [ 22 ]. However, due to the simplicity of synthesis, stability and higher conductivity, PANI proved to be the most suitable for production of nonwoven conductive materials.…”

The influence of terminal alkyl groups on the structure, and electrical and sensing properties of thin films of self-assembling organosilicon derivatives of benzothieno[3,2-b][1]benzothiophene

“…We have recently shown that organosilicon derivatives of BTBT can be successfully used in such devices as monolayer OFETs 39 and chemosensors based on them [40][41][42] as well as in memristors. 43,44 The use of Langmuir technologies as a deposition method is one of the most promising, fast and reproducible approaches for the manufacture of monolayer OFETs. 45 The data obtained earlier showed that self-assembling BTBT derivatives D2-Spacer-BTBT-Hex with an anchor disiloxane group and an optimal length of the alkyl spacer exhibit excellent semiconducting characteristics in monolayer OFETs prepared by Langmuir methods.…”