Pulse-induced switches in a Josephson tunnel stacked device

Pepe, G. P.; Peluso, G.; Valentino, M.; Barone, A.; Parlato, L.; Esposito, E.; Granata, C.; Russo, M.; Leo, C. De; Rotoli, G.

doi:10.1063/1.1402652

Cited by 7 publications

(9 citation statements)

References 12 publications

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“…it commutes for each pulse across the injector. Qualitatively similar results can be obtained also with different values of the stack coupling, pulse length, spatial dependence and by changing the pulse amplitude [4,6].…”

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confidence: 70%

“…We study the passage from the zero voltage state to the dissipative state produced by injected electronic pulses, and the possibility of resetting, i.e., the pulse assisted return to zero voltage, under suitable conditions for injected electronic pulses in terms of their amplitudes and bias currents. Comparison with a recent experiment [4] on a stacked device is also shown.…”

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confidence: 90%

“…The process and the junction characterization have been described in ref. [4]. The Josephson penetration depth λ J was estimated to be 70 µm, thus implying a ratio L/ λ J ≈ 1.4 for a Josephson critical current J c = 80 A/cm 2 and L=100 µm.…”

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confidence: 99%

“…In particular, in the presence of injected pulses across the bottom junction, a change of the detector voltage from the state V=0 to the quasi-particle branch of the I-V curve and viceversa is observed similar to that described above in the simulations (see Fig.2 and ref. [4]). This behavior, observed both in single shot and a.c.…”

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confidence: 99%

“…Transistor-like devices [1], integration with fast optoelectronic devices [2,3], and finally bi-stable devices [4] have been recently developed. In this paper we present some numerical results concerning the behavior of a current biased Josephson Junction (JJ) under the influence of an electronic current pulse injected both directly in the junction via its bias current and from a second JJ forming a double tunnel junction stacked device.…”

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confidence: 99%

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Pulsed-assisted escape from zero voltage state in Josephson systems

Rotoli

Leo

Pepe³

et al. 2002

Physica C: Superconductivity

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The behavior of a Josephson system under pulsed operation is of utmost importance for developing reliable digital devices working at very high clock frequencies. Information about effect of thermal noise over pulsed operation is also useful to design errors free devices. Recent experiments in a system of two stacked junctions show that a pulsed operation on the first junction (injector) of the stack drive the Josephson biased second junction (detector) into the resistive state. The experiment was interpreted as pulsed-assisted escape toward resistive state as a consequence of an excitation of large non-linear oscillations in the detector junction that, with the contribution of thermal noise, drives out the junction from the zero voltage state. Moreover, in the same experiment for an unstability of the resistive state toward the zero voltage state under the pulsed operation was also noted. By means of a systematic numerical approach to the problem, we present a study of the pulsed-assisted escape using the framework of the thermal escape theory for the direct transition from zero voltage state to resistive state. We study the single junction case and a stacked configuration as examples of different systems showing pulsed-assisted escape.

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supporting

confidence: 70%

mentioning

confidence: 90%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Pulsed-assisted escape from zero voltage state in Josephson systems

Rotoli

Leo

Pepe³

et al. 2002

Physica C: Superconductivity

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Low Tc Josephson Junction Response to an Ultrafast Laser Pulse

Lucignano

Tagliacozzo

Hekking

2004

Quantum Computing and Quantum Bits in Mesoscopic Systems

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By irradiating with a single ultrafast laser pulse a superconducting electrode of a Josephson junction it is possible to drive the quasiparticles (qp's) distribution strongly out of equilibrium. The behavior of the Josephson device can, thus, be modified on a fast time scale, shorter than the qp's relaxation time. This could be very useful, in that it allows fast control of Josephson charge qubits and, in general, of all Josephson devices. If the energy released to the top layer contact S1 of the junction is of the order of ∼ µJ, the coherence is not degradated, because the perturbation is very fast. Within the framework of the quasiclassical Keldysh Green's function theory, we find that the order parameter of S1 decreases. We study the perturbed dynamics of the junction, when the current bias is close to the critical current, by integrating numerically its classical equation of motion. The optical ultrafast pulse can produce switchings of the junction from the Josephson state to the voltage state. The switches can be controlled by tuning the laser light intensity and the pulse duration of the Josephson junction.

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