Pulse-induced acoustoelectric vibrations in surface-gated GaAs-based quantum devices

Abstract

We present the results of a numerical investigation which show the excitation of acoustoelectric modes of vibration in GaAs-based heterostructures due to sharp nanosecond electric-field pulses applied across surface gates. In particular, we show that the pulses applied in quantum information processing applications are capable of exciting acoustoelectric modes of vibration including surface acoustic modes which propagate for distances greater than conventional device dimensions. We show that the pulse-induced acoustoelectric vibrations are capable of inducing significant undesired perturbations to the evolution of quantum systems.

Dynamical Steady States in Driven Quantum Systems

“…The electron-phonon coupling Hamiltonian is given by Eq. 1 with Z S = σ z [8,21,22]. Z S (t) has Fourier frequencies W = ±{0, Ω , ω 0 , ω 0 ± Ω } and coefficients…”

Transporting and manipulating single electrons in surface‐acoustic‐wave minima

“…The details of the SAW potential itself have been modeled by Rahman et al. in 3D using finite‐element methods .…”

“…They found that the current quantisation should be best for a channel a little longer than the SAW wavelength. The details of the SAW potential itself have been modelled by Rahman et al in 3D using finite-element methods [26,27].…”