Pulse energy packing effects on material transport during laser processing of $$<1|1|1>$$ < 1 | 1 | 1 > silicon

Abstract

The effects of energy pulse packing on material transport during single-pulse laser processing of < 1|1|1 > silicon is studied using temporarily shaped pulses with durations from 50 to 150 ns. Six regimes of material transport were identified and disambiguated through energy packing considerations over a range of pulse durations. Energy packing has been shown to shift the interaction to energetically costlier regimes without appreciable benefit in either depth, material removal or crater morphology and quality.

Laser surface texturing of SS316L for enhanced adhesion of HUVECs

“…While the use of this method for ps- and fs-pulsed lasers was adequate, with ns-pulsed lasers the description of an ablation threshold only falls short for describing the differences observed as a function of process parameters [26]. With ns-pulsed lasers, as observed also in this study at lower pulse energy levels, material removal mechanism became predominantly based on melt displacement [27]. With an increase in energy levels, melt ejection and vaporisation took part, providing a more efficient material removal mechanism.…”