2014
DOI: 10.1103/physrevb.90.019901
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Publisher's Note: Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes [Phys. Rev. B89, 174430 (2014)]

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Cited by 20 publications
(29 citation statements)
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“…(f) Spin-wave frequency f vs J . Modeling parameters are [26]: d = 0.4 nm, A sim = 16.0 meV, K sim = 0.04 meV, μ = 3.45μ B , θ SH = 0.1, α = 0.001, and χ = 0 (i.e., B F = 0) or 23 (i.e., B F ≠ 0 [27]). We use D sim = 0 or D sim = 2.0 meV, obtaining a Bloch or Néel wall, respectivel…”
Section: Figmentioning
confidence: 99%
See 1 more Smart Citation
“…(f) Spin-wave frequency f vs J . Modeling parameters are [26]: d = 0.4 nm, A sim = 16.0 meV, K sim = 0.04 meV, μ = 3.45μ B , θ SH = 0.1, α = 0.001, and χ = 0 (i.e., B F = 0) or 23 (i.e., B F ≠ 0 [27]). We use D sim = 0 or D sim = 2.0 meV, obtaining a Bloch or Néel wall, respectivel…”
Section: Figmentioning
confidence: 99%
“…SOT-driven antiferromagnetic domain wall motion for B F ≠ 0 (χ = 23 [27]): (a) Domain wall velocity υ DW vs current density J [28]. Inset shows the domain wall angle ϕ for an antiferromagnetic domain wall that is initially of Bloch type.…”
Section: Figmentioning
confidence: 99%
“…Antiferromagnets (AFs)-based spintronics is a branch of science that explores spin dependent transport devices using AFs instead of ferromagnets (F). 1,2 It is currently considered as a significant exploratory topic in spintronics [3][4][5][6] since AFs exhibit no stray fields, which is beneficial for ultimate downsize scalability. In particular, a first theoretical toy model showed AF spin transfer torque (STT) and giant magnetoresistance (GMR) for metallic AF/PM/AF multilayers, 7 where PM stands for a paramagnetic metallic spacer.…”
mentioning
confidence: 99%
“…(1) is directly applied to AFMs, one would conclude that there can be no STT in AFMs where P becomes zero or vanishingly small; recent research has been confirming that this is of course not the case. The study of STTs involving AMF materials was started by investigation of current-driven effects in spin valves or multilayer systems where each AFM layer carries a single domain [4][5][6][7][8][9][10]. Theoretical studies have unveiled an important role of the STT also in textured AFMs as in textured FMs [10][11][12][13][14][15]; Xu et al [10] examined the current-driven dynamics of a domain wall (DW) in a two-sublattice AFM metal by ab initio calculations.…”
Section: Introductionmentioning
confidence: 99%