Publisher's Note: Large fraction of crystal directions leads to ion channeling [Phys. Rev. B 
<b>94</b>
, 214109 (2016)]

Nordlund, K.; Djurabekova, Flyura; Hobler, G.

doi:10.1103/physrevb.95.099901

Cited by 15 publications

(21 citation statements)

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“…In order to reduce the channeling effect [49,42], we have selected two fixed values of the incident angles: θ = 7°and θ = 20° [47,48]. As expected, the simulations at 300 K and θ = 7°resulted in similar behavior of Y(E k ) as in Fig.…”

Section: Sputtering Yields Under Tilted Incidencementioning

confidence: 78%

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Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Metspalu

Jansson

Zadin

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices. In this study, by means of molecular dynamics simulations, we analyze the effect of surface temperature and morphology on the yield of self-sputtering of copper with ion energies of 0.1-5 keV. We analyze all three lowindex surfaces of Cu, {100}, {110} and {111}, held at different temperatures, 300 K, 500 K and 1200 K. The surface roughness relief is studied by either varying the angle of incidence on flat surfaces, or by using arbitrary roughened surfaces, which result in a more natural distribution of surface relief variations. Our simulations provide detailed characterization of copper self-sputtering with respect to different material temperatures, crystallographic orientations, surface roughness, energies, and angles of ion incidence.

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Section: Sputtering Yields Under Tilted Incidencementioning

confidence: 78%

“…We used the systematic approach introduced in Ref. [49] for analyzing channeling over all crystal directions. In the current case, we simulated the mean ion range of 100 eV -5 keV Cu ions on a (001)…”

Section: Analysis Of Channelingmentioning

confidence: 99%

Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Metspalu

Jansson

Zadin

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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“…The fundamental principle is that the energetic ions can move inside the crystals that may penetrate much deeper if the atoms in the crystal are directed in some specific crystal directions [34]. This phenomenon is termed as a "channeling" effect that can be utilized for instance in specific ion beam analysis methods and can be explained analytically and atomistic simulations based on molecular dynamics (MD) methods [34]. From Fig.…”

Section: Resultsmentioning

confidence: 99%

Role of Ni substitution on structural, magnetic and electronic properties of epitaxial CoCr₂O₄ spinel thin films

Mohanty¹,

Chowdhury²,

Choudhary³

et al. 2020

Nanotechnology

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Cubic spinel CoCr 2 O 4 has attained recent attention due to its multiferroic properties. However, the Co site substitution effect on the structural and magnetic properties has rarely been studied in thin film form. In this work, the structural and magnetic properties of Co 1x Ni x Cr 2 O 4 (x = 0, 0.5) epitaxial thin films deposited on MgAl 2 O 4 (100) and MgO (100) substrates to manipulate the nature of strain in the films using pulsed laser deposition (PLD) technique are presented. The epitaxial nature of the films was confirmed through X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements. Raman measurements revealed a disappearance of characteristic A 1g and F 2g modes of the CoCr 2 O 4 with increase in the Ni content. Atomic force microscopy (AFM) studies show a modification of the surface morphology upon Ni substitution. Magnetic measurements disclose that the ferrimagnetic Curie temperature (T c ) of the CoCr 2 O 4 in thin film grown on MgAl 2 O 4 (100) and MgO (100) substrates were found to be 100.6 ± 0.5 K and 93.8 ± 0.2 K, respectively. With Ni substitution the transition temperatures significantly get enhanced from that of CoCr 2 O 4 . X-ray photoelectron spectroscopy (XPS) suggests Cr 3+ oxidation states in the films, while Co ions are present in a mixed Co 2+ /Co 3+ oxidation state. The substitution of Ni at Co site significantly modifies the line shape of the core level as well as the valence band. Ni ions are also found to be in a mixed 2+/3+ oxidation state. O 1s core level display asymmetry related to possible defects like oxygen vacancies in the films. CoCr 2 O 4 is a ferrimagnetic spinel compound with complex magnetic interactions at low temperatures [1]. The magnetic cations Co 2+ and Cr 3+ ions occupy the tetrahedral A and octahedral B sites, respectively, of the spinel structure [1]. Below Curie temperature (T C = 93 K), a collinear ferrimagnetic ordering occurs, with further lowering the temperature to 26 K (T S ) the compound develops a short-range-ordered (SRO) spiral component [1]. Theoretical calculations has also evidenced the T S feature due to the nesting of the Fermi surface having high degree of magnetic instability in the system associated with the nesting vector q along the [110] direction [2]. Recent experiments have shown the size dependence of these magnetic transitions [3]. Below a critical particle size of d c , spiral = 4.4 (1) nm, the spiral ordering vanishes [3] and for size less than d c , col = 3.3 (1) nm, the collinear magnetic order disappears [3]. A lock-in transition at a temperature T L = 15 K appears because of the incommensurate-to-commensurate magnetic phase transition [1]. At T L the period of the spin spiral eventually "locks in" to the lattice parameter [1]. This spiral component is responsible for inducing the multiferroicity in CoCr 2 O 4 [1]. Structurally, CoCr 2 O 4 is stable and remains cubic with space group Fd ̅ m at all temperatures as the sample is cooled down to 10 K [4].On the other hand for NiCr 2 O 4 the crystal ...

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“…Channeling ions travel deeper into the sample generating fewer secondary electrons near the surface thus giving rise to darker contrast. Here we observe two cross shapes on each blister, one rotated by 45 • with respect to the other, which we attribute to channeling along (100) and (110) planes [18]. The dose series in Fig.…”

mentioning

confidence: 60%

Key Mechanistic Features of Swelling and Blistering of Helium-Ion-Irradiated Tungsten

2019

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A B S T R A C THelium-ion-induced swelling and blistering of single-crystal tungsten is investigated using a Helium Ion Microscope for site-specific dose-controlled irradiation (at 25 keV) with analysis by Helium Ion Microscopy, Atomic Force Microscopy and Transmission Electron Microscopy (cross-sectioning by Focused Ion Beam milling). Our measurements show that the blister cavity forms at the depth of the helium peak and that nanobubbles coalesce to form nanocracks within the envelope of the ion stopping range, causing swelling of the blister shell. These results provide the first direct experimental evidence for the interbubble fracture mechanism proposed in the framework of the gas pressure model for blister formation.

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Publisher's Note: Large fraction of crystal directions leads to ion channeling [Phys. Rev. B 94 , 214109 (2016)]

Cited by 15 publications

References 0 publications

Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Role of Ni substitution on structural, magnetic and electronic properties of epitaxial CoCr₂O₄ spinel thin films

Key Mechanistic Features of Swelling and Blistering of Helium-Ion-Irradiated Tungsten

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Publisher's Note: Large fraction of crystal directions leads to ion channeling [Phys. Rev. B 94 , 214109 (2016)]

Cited by 15 publications

References 0 publications

Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Role of Ni substitution on structural, magnetic and electronic properties of epitaxial CoCr2O4 spinel thin films

Key Mechanistic Features of Swelling and Blistering of Helium-Ion-Irradiated Tungsten

Contact Info

Product

Resources

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Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Cu self-sputtering MD simulations for 0.1–5 keV ions at elevated temperatures

Role of Ni substitution on structural, magnetic and electronic properties of epitaxial CoCr₂O₄ spinel thin films