Publisher’s Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B<b>69</b>, 045207 (2004)]

Chow, K. H.; Vlasenko, L. S.; Johannesen, P.; Bozdog, Cornel; Watkins, G. D.; Usui, Akira; Sunakawa, Hajime; Sasaoka, Chiaki; Mizuta, Masahiro

doi:10.1103/physrevb.69.089905

Cited by 19 publications

(40 citation statements)

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“…Unfortunately, it is not possible to determine the identity of these negative defects with positron annihilation spectroscopy. However, as the isolated interstitials have been shown to be mobile already at room temperature, 6,7 it is likely that the observed defects are stabilized by other defects or impurities. The complex annealing behavior supports this interpretation.…”

Section: Negative Ions With Different Charge Statesmentioning

confidence: 99%

“…However, only in the most recent studies 2,3,7 could the measurements be performed in samples with both low impurity content and low dislocation densities, [9][10][11] allowing more accurate observations of the isolated intrinsic point defects. In most of these studies, the irradiations were performed with electrons of 2 MeV ͑or higher͒ energy, in which case damage is created in both Ga and N sublattices.…”

Section: Introductionmentioning

confidence: 99%

“…The ODEPR experiments, [4][5][6][7] performed after irradiations at cryogenic temperatures, have shown that the isolated positively charged Ga interstitials are mobile already below room temperature. However, they may be complexed with other irradiation-induced defects or residual impurities and survive thermal treatments up to 800 K. 4,5 The more recent ODEPR results suggest that the isolated negatively charged Ga vacancies could also be stable up to 800 K, 7 while the earlier positron experiments performed after room-temperature 2 MeV electron irradiation indicate that the isolated Ga vacancies ͑produced at a rate of 1 cm −1 ͒ anneal out of GaN samples already at 600 K. 8 The results of the irradiations performed with low-energy ͑0.42 MeV͒ electrons 2 suggest that N vacancy donors are produced at a rate of 0.02 cm −1 and N interstitial acceptors at a lower rate of 0.01 cm −1 .…”

Section: Introductionmentioning

confidence: 99%

“…The defects introduced in electron irradiation of GaN have been studied earlier with electrical and optical methods, [1][2][3] optical detection of electron paramagnetic resonance ͑ODEPR͒, [4][5][6][7] and positron annihilation spectroscopy 8 as well. However, only in the most recent studies 2,3,7 could the measurements be performed in samples with both low impurity content and low dislocation densities, [9][10][11] allowing more accurate observations of the isolated intrinsic point defects.…”

Section: Introductionmentioning

confidence: 99%

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Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

et al. 2007

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Section: Negative Ions With Different Charge Statesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

et al. 2007

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“…It has been shown theoretically that V Ga -O N complexes do possess magnetic moment. 10 In principle, also interstitial-type defects are created in irradiation, but they are not stable at room temperature, 21 hence concentrating on the vacancy-type defects is justified.…”

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confidence: 99%

Magnetically active vacancy related defects in irradiated GaN layers

et al. 2012

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We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3...8.3x10^17 cm^-3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T = 5 K with coercive field of about H_C = 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically-active defects with respect to the total Ga- vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.Comment: 3 pages, 3 figure

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Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Publisher’s Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B69, 045207 (2004)]

Cited by 19 publications

References 0 publications

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Magnetically active vacancy related defects in irradiated GaN layers

Radiation Damage in GaN‐Based Materials and Devices

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