Publisher’s Note: Interfacial Structure Dependent Spin Mixing Conductance in Cobalt Thin Films [Phys. Rev. Lett.<b>115</b>, 056601 (2015)]

Tokaç, M.; Bunyaev, S. A.; Kakazeı̆, G. N.; Schmool, David S.; Atkinson, D.; Hindmarch, A. T.

doi:10.1103/physrevlett.115.089901

Cited by 18 publications

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“…By considering bulk value as reference layer, we evaluated effective spin mixing conductance ~ 2.00 ± 0.08 × 10 18 m -2 for Pt/Co/Pt layer which is larger than Ta/Pt/Co/Pt/Ta. These values are in agreement with other reports [21]. It is also observed that the g-factor decreases with increasing effective demagnetization field with respect to seed and capping layers.…”

Section: Discussionsupporting

confidence: 82%

“…It is known that g ↑↓ describes the total spin current and it gets dissipated from the FM film through its interface with NM layer by considering the backflow of the spin current. The estimated values of g ↑↓ are comparable to the other recent reported values [21]. It can be seen from Table IV that the value of g ↑↓ is highest (2.00 ± 0.08 × 10 18 m -2 ) for sample S7 in which Pt is used as both seed and capping layers.…”

Section: Sample Sample Details (In Parenthesis Thickness Is In Nm)supporting

confidence: 78%

“…By changing the capping layer Pt/Ta (S1) to Au/Ta (S4), the value of H K increases by ~ 6 Oe. We cannot also rule out the effect of the phases of Co (hcp and fcc) as shown by Tokac et al [21]. Table II: The parameters evaluated from the fitting of experimental data of sample S1, S2, S3 and S4 using equation (2) [27].…”

Section: …(4)mentioning

confidence: 99%

“…Recently, research has been focussed to understand the effect of heavy metal as seed and capping layers [17][18][19][20][21][22]. In a recent report Tokac et al [21] have shown that the effective spin conductance mixing strongly depends on the interfaces of seed (Ta/Cu) and capping (Cu or Ir) layers. They observed large effective spin mixing conductance for Ir as a capping layer due to its large spin orbit coupling.…”

Section: Introductionmentioning

confidence: 99%

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Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

Singh

Jena

2017

J. Phys. D: Appl. Phys.

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Abstract:We investigated the dependence of the seed (Ta/Pt, Ta/Au) and capping (Pt/Ta, Au/Ta) layers on spin pumping effect in the ferromagnetic 3 nm thick Co thin film using ferromagnetic resonance spectroscopy. The data is fitted with Kittel's equation to evaluate damping constant and g-factor. A strong dependence of seed and capping layers on spin pumping has been discussed. The value of damping constant (α) is found to be relatively large i.e. 0.0326±0.0008 for the Ta(3)/Pt(3)/Co(3)/Pt(3)/Ta(3) (nm) multilayer structure, while it is 0.0104±0.0003 for Ta(3)/Co(3)/Ta(3) (nm). Increase in α is observed due to Pt layer that works as a good sink for spins due to high spin orbit coupling. In addition, we measured the effective spin conductance  g = 2.00 ± 0.08 × 10 18 m -2 for the tri-layer structure Pt(3)/Co(3)/Pt(3) (nm) as a result of the enhancement in α relative to its bulk value.We observed that the evaluated g-factor decreases as effective demagnetizing magnetic field increases in all the studied samples. The azimuthal dependence of magnetic resonance field and line width showed relatively high anisotropy in the tri-layer Ta(3)/Co(3)/Ta(3) (nm) structure.

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Section: Discussionsupporting

confidence: 82%

Section: Sample Sample Details (In Parenthesis Thickness Is In Nm)supporting

confidence: 78%

Section: …(4)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

Singh

Jena

2017

J. Phys. D: Appl. Phys.

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“…20 This unambiguously isolates any interfacial contribution to AMR from effects due to variations in the film microstructure and/or texture between pairs of samples with different overlayers. Microstructural variation in the cobalt layers would occur were we to use Ir/Co/Ir multilayers; due to the lattice mismatch between Ir and Co, Co grown on Ir will have a very different density of crystalline defects.…”

Section: Introductionmentioning

confidence: 99%

Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

et al. 2015

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We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

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Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb₂Te₃ Topological Insulator Chemically Grown on Silicon

Longo

Belli

Alia

et al. 2021

Adv Funct Materials

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Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort toward the development of fast and ultra-low power devices for future information and communication technology. A large spin-to-charge (S2C) conversion efficiency in Au/Co/Au/Sb 2 Te 3 /Si(111) heterostructures based on Sb 2 Te 3 TIs grown by metal-organic chemical vapor deposition on 4″ Si(111) substrates is reported. By conducting room temperature spin pumping ferromagnetic resonance, a 250% enhanced charge current due to spin pumping in the Sb 2 Te 3containing system is measured when compared to the reference Au/Co/Au/ Si(111). The corresponding inverse Edelstein effect length λ IEE ranges from 0.28 to 0.61 nm, depending on the adopted methodological analysis, with the upper value being so far the largest observed for the second generation of 3D chalcogenide-based TIs. These results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing S2C conversion, thus marking a milestone toward future technology-transfer.

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Publisher’s Note: Interfacial Structure Dependent Spin Mixing Conductance in Cobalt Thin Films [Phys. Rev. Lett.115, 056601 (2015)]

Cited by 18 publications

References 0 publications

Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb₂Te₃ Topological Insulator Chemically Grown on Silicon

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Publisher’s Note: Interfacial Structure Dependent Spin Mixing Conductance in Cobalt Thin Films [Phys. Rev. Lett.115, 056601 (2015)]

Cited by 18 publications

References 0 publications

Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon

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Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb₂Te₃ Topological Insulator Chemically Grown on Silicon