Publisher’s Note: How Perfect Can Graphene Be? [Phys. Rev. Lett.<b>103</b>, 136403 (2009)]

Neugebauer, Petr; Орлита, М.; Faugeras, C.; Barra, Anne‐Laure; Potemski, M.

doi:10.1103/physrevlett.103.159902

Cited by 76 publications

(115 citation statements)

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“…[16,17] and the Supplemental Material [27]) permitted Raman scattering experiments in magnetic fields up to 14 T (supplied by a superconducting coil, data collected for G-BN) or up to 29=30 T (supplied by a resistive magnet, data collected for G-S and G-Gr), at low temperatures (4 K) and with a spatial resolution of ∼1 μm (diameter of the laser spot on the sample). Though the adequate electrical characterization of the investigated samples was not possible, we assume here that all our three graphene flakes are not far from being neutral systems; this is supported by many other studies of similar structures [23,24,28,29].…”

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confidence: 59%

Landau Level Spectroscopy of Electron-Electron Interactions in Graphene

et al. 2015

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We present magneto-Raman scattering studies of electronic inter-Landau level excitations in quasineutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of noninteracting massless Dirac electrons but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter-Landau level excitations in graphene are sensitive to electron-electron interactions due to the nonapplicability of the Kohn theorem in this system, with a clearly nonparabolic dispersion relation.

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confidence: 59%

Landau Level Spectroscopy of Electron-Electron Interactions in Graphene

et al. 2015

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“…They have been evidenced by low temperature STM experiments 24 , studied by an EPR-like technique in magnetic fields 25 and mapped with microRaman scattering measurements in high magnetic fields revealing their graphene-like electronic excitation spectrum 13 and the associated magneto-phonon effect 13,20 .…”

Section: Methodsmentioning

confidence: 99%

Electronic excitations and electron-phonon coupling in bulk graphite through Raman scattering in high magnetic fields

et al. 2011

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We use polarized magneto-Raman scattering to study purely electronic excitations and the electron-phonon coupling in bulk graphite. At a temperature of 4.2 K and in magnetic fields up to 28 T we observe K-point electronic excitations involving Landau bands with ∆|n| = 0 and with ∆|n| = ±2 that can be selected by controlling the angular momentum of the excitation laser and of the scattered light. The magneto-phonon effect involving the E2g optical phonon and K-point inter Landau bands electronic excitations with ∆|n| = ±1 is revealed and analyzed within a model taking into account the full kz dispersion. These polarization resolved results are explained in the frame of the Slonczewski-Weiss-McClure (SWM) model which directly allows to quantify the electron-hole asymmetry.

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“…It is assumed that the MGL struc- ture under consideration comprises K upper GLs and a highly conducting bottom GL on a SiC substrate or K GLs (without the bottom GL) on a Si substrate. Epitaxial MGL structures with up to K = 100 GLs with very long momentum relaxation time of electrons and holes (τ ≃ 20 ps) were recently fabricated using the thermal decomposition from 4H-SiC substrate [15]. MGL structures without the bottom GL can be fabricated using chemical/mechanical reactions and transferred substrate techniques which include chemically etching the substrate and the highly conducting bottom GL [16] (or mechanically peeling the upper GLs) and transferring the upper portion of the MGL structure on a Si or equivalent transparent substrate.…”

Section: Device Modelmentioning

confidence: 99%

Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides

Ryzhii

Dubinov

Otsuji³

et al. 2010

Journal of Applied Physics

141

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Terahertz (THz) lasers on optically pumped multiple-graphene-layer (MGL) structures as their active region are proposed and evaluated. The developed device model accounts for the interband and intraband transitions in the degenerate electron-hole plasma generated by optical radiation in the MGL structure and the losses in the slot or dielectric waveguide. The THz laser gain and the conditions of THz lasing are found. It is shown that the lasers under consideration can operate at frequencies 1 THz at room temperatures.

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Publisher’s Note: How Perfect Can Graphene Be? [Phys. Rev. Lett.103, 136403 (2009)]

Cited by 76 publications

References 0 publications

Landau Level Spectroscopy of Electron-Electron Interactions in Graphene

Landau Level Spectroscopy of Electron-Electron Interactions in Graphene

Electronic excitations and electron-phonon coupling in bulk graphite through Raman scattering in high magnetic fields

Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides

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