2010
DOI: 10.1103/physrevb.81.099903
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Publisher's Note: Hall effect in superconductingFe(Se0.5Te0.5)thin films [Phys. Rev. B81, 054

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Cited by 18 publications
(36 citation statements)
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“…Hence, we believe, our data shows a substantial influence of AHE in the transverse resistivity. We note that recently AHE was also reported in FeSe 1-x Te x films [22]. Shown in figure 2(b) (filled symbols) is the temperature dependence of the Hall coefficient R H obtained from the H-linear portion of ρ xy .…”
supporting
confidence: 57%
“…Hence, we believe, our data shows a substantial influence of AHE in the transverse resistivity. We note that recently AHE was also reported in FeSe 1-x Te x films [22]. Shown in figure 2(b) (filled symbols) is the temperature dependence of the Hall coefficient R H obtained from the H-linear portion of ρ xy .…”
supporting
confidence: 57%
“…Longitudinal and transverse (Hall) resistivities were measured by six-lead method with a Physical Property Measurement System (PPMS, Quantum Design) at temperatures down to 2 K and magnetic fields up to 9 T. In order to decrease the contact resistance, we sputtered gold on the contact pads just after the cleavage, then gold wires were attached on the contacts with silver paste. behavior (dρ/dT > 0) below 100 ∼ 150 K. Actually, some previously reported resistive results on FeTe 1−x Se x show semiconducting behavior before superconducting transition temperature [16,17,18], which is interpreted by the effect of excess Fe [16,34]. Density functional study shows that the excess Fe in the interstitial sites is magnetic and interacts with magnetism of Fe in Fe planes [21].…”
Section: Methodsmentioning
confidence: 99%
“…8) Hall effect measurements are one of the powerful techniques to trace how the electronic state changes from FeTe with Se substitution. 13) In this letter, we report on the detailed Hall-effect measurements in the parent compound FeTe thin films, and try to apply two-band Drude picture to demonstrate an interplay of electrons and holes using resistivity and Hall coefficients data. Although the band calculation predicts the sufficient amount of electron and hole density in FeTe, difference of the magnitude of mobility is remarkable not only in the paramagnetic (PM) but also in the AFM states, which suggests the absence of interplay between two types of carriers.…”
mentioning
confidence: 99%
“…13) We first measure the transverse resistivity by sweeping the magnetic field between -9 T ≤ µ 0 H ≤ 9 T applied normal to the film surface, and then extract an asymmetric component to determine the Hall resistivity ρ xy . Figures 2(a) -2(c) show the field dependence of ρ xy at different temperatures.…”
mentioning
confidence: 99%
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