Publisher’s Note: Engineering a Robust Quantum Spin Hall State in Graphene via Adatom Deposition [Phys. Rev. X<b>1</b>, 021001 (2011)]

Weeks, Conan; Hu, Jun; Alicea, Jason; Franz, Marcel; Wu, Ruqian

doi:10.1103/physrevx.2.029901

Cited by 192 publications

(352 citation statements)

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“…In accordance with a number of works [17][18][19] a QSH phase in graphene was predicted to be formed due to deposition of certain heavy adatoms on graphene induced by enhanced SO coupling strength. Moreover, it has been predicted that the topological phase can be developed in transition metals (Re [19] and Mn [40]) intercalated graphene with formation of the increased SO gap due to orbital coupling between the graphene π states and transition metal d states.…”

Section: Discussionmentioning

confidence: 67%

“…Two mechanisms, which can create the spin-orbit gap in graphene with impurities were proposed by Weeks et al [17] and Hu et al [18]. The first is based on the interaction of graphene with heavy p adatoms.…”

Section: Introductionmentioning

confidence: 99%

“…The topological gap in graphene can be opened when "intrinsic" SOI is higher than Rashba SOI. The term "intrinsic" SOI means that it can be described by additional terms in Hamiltonian, which is similar to atomic SOI [16,17].…”

Section: Introductionmentioning

confidence: 99%

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Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)

et al. 2015

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The modification of the graphene spin structure is of interest for novel possibilities of application of graphene in spintronics. The most exciting of them demand not only high value of spin-orbit splitting of the graphene states, but non-Rashba behavior of the splitting and spatial modulation of the spin-orbit interaction. In this work we study the spin and electronic structure of graphene on Ir(111) with intercalated Pt monolayer. Pt interlayer does not change the 9.3 × 9.3 superlattice of graphene, while the spin structure of the Dirac cone becomes modified. It is shown that the Rashba splitting of the π state is reduced, while hybridization of the graphene and substrate states leads to a spin-dependent avoided-crossing effect near the Fermi level. Such a variation of spin-orbit interaction combined with the superlattice effects can induce a topological phase in graphene.

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Section: Discussionmentioning

confidence: 67%

Section: Introductionmentioning

confidence: 99%

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Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)

et al. 2015

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“…6 demonstrates that heavy elements such as the REs can increase the average SOI experienced by carriers in their proximity, leading to the observed experimental result. The increase by adatom coverage has been observed in metals systems 7 and has been proposed as a means of increasing the average SOI in low-SOI systems like graphene 21 . Figure 6 indicates that for both bare and covered mesas τ −1 SO is not strongly T -dependent within the experiment range of T , consistent with previous discussions 22 .…”

mentioning

confidence: 99%

Measurement by antilocalization of interactions between InAs surface electrons and magnetic surface species

Zhang¹,

Kallaher²,

Soghomonian³

et al. 2013

Phys. Rev. B

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“…Several proposals have been put forward to enhance the SOC effect of graphene, such as a direct deposition of hydrogen or heavy element adatoms [8][9][13][14][15] . Meanwhile, Bi 2 Se 3 and Bi 2 Te 3 are the most extensively studied 3D TI materials to date [16][17][18] .…”

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confidence: 99%

Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature

et al. 2013

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† These authors have contributed equally to this work.Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi 2 Se 3 slabs that exhibits a large intrinsic bulk band gap of 30 to 50 meV, making it viable for roomtemperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi 2 Se 3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi 2 Se 3 interfaces demonstrates feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

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Publisher’s Note: Engineering a Robust Quantum Spin Hall State in Graphene via Adatom Deposition [Phys. Rev. X1, 021001 (2011)]

Cited by 192 publications

References 0 publications

Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)

Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)

Measurement by antilocalization of interactions between InAs surface electrons and magnetic surface species

Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature

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