2005
DOI: 10.1103/physrevb.71.239903
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Publisher's Note: Charge transfer and Fermi level shift inp-doped single-walled carbon nanotubes [Phys. Rev. B71, 205423 (2005)]

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Cited by 57 publications
(153 citation statements)
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“…The G band position for porous graphene was observed at ≈1582 cm −1 , which can be compared with the G position of pristine graphene (≈1580 cm −1 ) in our sample. This upshift in the G band position further confirms the hole‐doping in the NPG by the formation of oxygen dangling bonds with graphene, as reported by previous research …”
Section: Resultssupporting
confidence: 90%
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“…The G band position for porous graphene was observed at ≈1582 cm −1 , which can be compared with the G position of pristine graphene (≈1580 cm −1 ) in our sample. This upshift in the G band position further confirms the hole‐doping in the NPG by the formation of oxygen dangling bonds with graphene, as reported by previous research …”
Section: Resultssupporting
confidence: 90%
“…This upshift in the G band position further confi rms the holedoping in the NPG by the formation of oxygen dangling bonds with graphene, as reported by previous research. [ 27 ] Figure 4 shows SEM images of the NPG obtained using our AAO templates with a periodicity of 106.11.8 nm. The histograms resulting from the statistical analysis show that a series of NPG samples with adjustable pores diameter have been achieved.…”
Section: Raman Studies For Few Layers and Np Graphenementioning
confidence: 99%
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“…Second, the intrinsic SWNT optical transitions are bleached after acid treatment, indicating p-type doping of the SWNT film. [18,19] Also consistent with p-type doping of the SWNT film is the appearance of a ''free carrier'' absorbance at low energies ( Fig. 1e), arising from intraband transitions of valence-band holes.…”
mentioning
confidence: 67%
“…1e), arising from intraband transitions of valence-band holes. [18] Furthermore, the film changes from completely insulating to highly conductive after HNO 3 treatment. Thus, the nitric acid treatment effectively removes the CMC host, allowing the SWNTs to form conducting nanotube-nanotube junctions, and also dopes the SWNTs in a single step.…”
mentioning
confidence: 99%