Pt/WO3 thin films prepared by photochemical metal–organic deposition (PMOD) and its evaluation as carbon monoxide sensor

Buono-Core, G.E.; Klahn, A. Hugo; Cabello, G.; Muñoz, Eduardo; Bustamante, Mauricio; Castillo, Claudia; Chornik, B.

doi:10.1016/j.poly.2012.04.028

Cited by 10 publications

(14 citation statements)

References 30 publications

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“…The PMOD based methods can also enable the preparation of metal oxide thin films containing nanoparticles by encapsulating these pre‐formed nanostructures. [ 59,61 ] In PMOD based fabrication, dry or wet etching is not necessary, which as a result avoids introducing physical defects, chemical degradation of the patterned materials, and pollution from hazardous by‐products during dry or wet etching. [ 52 ] Moreover, the PMOD process can be performed under ambient conditions (e.g., room temperature, atmospheric pressure), which limits the inter‐diffusion of materials between the encapsulating matrix (e.g., TiO x ) and the nanoparticles (e.g., UCNPs) and otherwise avoids damage to the patterns and the nanoparticles.…”

Section: Resultsmentioning

confidence: 99%

“…The PMOD based lithography techniques have also been used to deposit films of metal oxides containing nanoparticles (e.g., CdS, Ag, Pt, and Fe 2 O 3 ). [46,[60][61][62] In contrast to other lithographic techniques and additive printing methods for material patterning, the PMOD based approaches have potential advantages that include processing under ambient conditions and fewer steps required to deposit and pattern metal or metal oxide films. [63] In this paper, we report the preparation of films of titanium oxide (TiO x ) with well-defined, high-resolution patterns and with UCNPs embedded within these films.…”

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confidence: 99%

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Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Zhang

Ali

Boyer

et al. 2020

Advanced Optical Materials

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by simple, portable techniques. [2-4] Various technologies such as laser patterned holograms, [5] nuclear track technology, [6] printing of non-fluorescent photonic crystalline materials, [7,8] and printing of luminescent materials, [2] have been utilized to prepare anti-counterfeit measures. Among these technologies, luminescent labels have attracted widespread attention due to their special optical characteristics, such as their unique emission spectra, lifetimes, and light scattering properties. [2-4,9] These labels are typically prepared by creating patterns from a luminescent "security ink." [2-4,9] These inks are usually prepared by incorporating luminescent nanoparticles into a matrix (e.g., suspensions containing solvents, surfactants, polymers, and/or other additives). [2,4] Common luminescent materials sought to prepare these inks include molecular species (e.g., organic dyes, organometallic complexes), [10-12] quantum dots (QDs) (e.g., C, CdS, CsPbI 3), [13-15] plasmonic nanostructures (e.g., Au, Ag), [16-18] upconverting nanoparticles (UCNPs) (e.g., β-NaYF 4 :Yb 3+ , Er 3+), [19-21] or downconversion materials (e.g., NaGdF 4 :Ce 3+ , Ln 3+). [22,23] Patterning of these luminescent inks offers several advantages to creating anti-counterfeiting measures such as compatibility with high-throughput patterning techniques, tunable emissive properties, and bright discernible colors under external stimuli. [1-4] For luminescent based anti-counterfeit measures, a luminescent ink can be used to produce various coded patterns. The anti-counterfeit properties of luminescent materials rely primarily upon their ability to discretely hide secret information and to create complex, coded patterns. [2,3,19,24] The ease of access to fluorescent molecules and downconversion nanomaterials active across the ultraviolet (UV)-to-visible region of the electromagnetic spectrum, and access to excitation sources across the same spectral range has made it easier to duplicate anticounterfeit measures based on fluorescent molecules, quantum dots, and plasmonic nanoparticles. [25] Recently, UCNPs have attracted attention for the preparation of luminescent inks, which have potential applications in anti-counterfeit technologies. Near-infrared (NIR)-to-visible luminescent materials based on the so-called "upconversion" luminescence are relatively Creating security labels as anti-counterfeit measures can require multi-step methods, clean room processing, and high-cost equipment. Some labels also have a limited applicability due to the ease of creating a counterfeit. Herein, a photochemical metal-organic deposition (PMOD) based approach that enables creation of high-resolution luminescent patterns that retain nanoparticles in transparent metal oxide films is reported. This low-cost, photoresist-free process creates high-resolution patterns of metal oxides without requiring processes such as etching or lift-off. Upconverting nanoparticles (UCNPs) with tunable red/green or blue emission are prepared by doping Yb 3+ /Er 3+ and Yb 3+ /Tm 3+ ...

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Zhang

Ali

Boyer

et al. 2020

Advanced Optical Materials

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“…Notable are anodic and cathodic charge extraction layers in Organic Light Emitting Diodes (OLEDs), 1,2 anodic layers in near-infrared absorbing dye-based photovoltaics, [3][4][5][6] electrochromic layers in smart windows, [7][8][9] energy storage compartments in photovoltaics, 10 photoanodes for photoelectrocatalysis, 11 and components in chemical and biological sensing devices. 12,13 The versatility of WO x for applications is derived from its high work function, visible light transparency, electrical and mechanical robustness, large surface area-to-volume ratio of vapor phase deposits and electrochromism. Although WO 3 itself contains a d 0 transition metal in its fully oxidized W 6+ state, the capability of chemical vapor deposition (CVD) to produce substoichiometric WO x material with partial occupation of W in lower oxidation states (W 5+ and W 4+ ) offers the possibility of controlling the electrical properties of the material.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and evaluation of κ²-β-diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WO_x thin films

et al. 2016

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Reactions of [WO(OR)4]x (x = 1, 2) complexes with bidentate ligands (LH = acacH, tbacH, dpmH, tbpaH) afforded complexes : [WO(OCH3)3(acac) (); WO(OCH2CH3)3(acac) (); WO(OCH(CH3)2)3(acac) (); WO(OCH3)3(tbac) (); WO(OCH2CH3)3(tbac) (); WO(OCH(CH3)2)3(tbac) (); WO(OCH2CH3)3(dpm) (); WO(OCH(CH3)2)3(dpm) (); WO(OCH2C(CH3)3)3(acac) (); WO(OCH2C(CH3)3)3(tbac) (); WO(OCH2C(CH3)3)3(dpm) (); WO(OCH2C(CH3)3)3(tbpa) (); WO(OC(CH3)3)3(tbac) ()]. The synthesis is facilitated by the lability of the bridging ligands of the [WO(OR)4]2 complexes in solution, which provides a pathway for exchange of L with an alkoxide ligand. Thermogravimetric analysis and the conditions for sublimation or distillation of demonstrate that they have sufficient vapor pressure and thermal stability for volatilization in a conventional Chemical Vapor Deposition (CVD) reactor. High solubility in hydrocarbon and ether solvents establishes that the complexes are also potential candidates for Aerosol-Assisted Chemical Vapor Deposition (AACVD). AACVD from on ITO or bare glass resulted in growth of continuous, dense and amorphous thin films of substoichiometric WOx between 250-350 °C and nanorods of W18O49 above 350 °C.

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“…In view of the evidence that W(VI) dioxo complexes are generated as intermediates during the thermal decomposition of 3 and 4 , it became of interest to explore the W(VI) dioxo complexes themselves as precursors for the growth of WO x materials. Complexes of the type WO 2 L 2 (L = 2,4-pentanedionate, 1,1,1-trifluoro-2,4-pentanedionate, and 1-benzoylacetonate) have been reported to afford pure WO 3 and Pt/WO 3 films by photodeposition , but to our knowledge, dioxo complexes have not been explored as precursors for conventional CVD or AACVD of WO x films. Due to the interest in continued development of precursors for deposition of high quality WO x thin films for the electronics industry, we have begun to explore the deposition chemistry of tungsten dioxo complexes.…”

Section: Introductionmentioning

confidence: 99%

Dioxo–Fluoroalkoxide Tungsten(VI) Complexes for Growth of WO_x Thin Films by Aerosol-Assisted Chemical Vapor Deposition

et al. 2015

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The soluble bis(fluoroalkoxide) dioxo tungsten(VI) complexes WO2(OR)2(DME) [1, R = C(CF3)2CH3; 2, R = C(CF3)3] have been synthesized by alkoxide-chloride metathesis and evaluated as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WOx. The (1)H NMR and (19)F NMR spectra of 1 and 2 are consistent with an equilibrium between the dimethoxyethane (DME) complexes 1 and 2 and the solvato complexes WO2(OR)2(CD3CN)2 [1b, R = C(CF3)2CH3; 2b, R = C(CF3)3] in acetonitrile-d3 solution. Studies of the fragmentation of 1 and 2 by mass spectrometry and thermolysis resulted in observation of DME and the corresponding alcohols, with hexafluoroisobutylene also generated from 1. DFT calculations on possible decomposition mechanisms for 1 located pathways for hydrogen abstraction by a terminal oxo to form hexafluoroisobutylene, followed by dimerization of the resulting terminal hydroxide complex and dissociation of the alcohol. AACVD using 1 occurred between 100 and 550 °C and produced both substoichiometric amorphous WOx and a polycrystalline W18O49 monoclinic phase, which exhibits 1-D preferred growth in the [010] direction. The work function (4.9-5.6 eV), mean optical transmittance (39.1-91.1%), conductivity (0.4-2.3 S/cm), and surface roughness (3.4-7.9 nm) of the WOx films are suitable for charge injection layers in organic electronics.

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Pt/WO3 thin films prepared by photochemical metal–organic deposition (PMOD) and its evaluation as carbon monoxide sensor

Cited by 10 publications

References 30 publications

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Synthesis and evaluation of κ²-β-diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WO_x thin films

Dioxo–Fluoroalkoxide Tungsten(VI) Complexes for Growth of WO_x Thin Films by Aerosol-Assisted Chemical Vapor Deposition

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Pt/WO3 thin films prepared by photochemical metal–organic deposition (PMOD) and its evaluation as carbon monoxide sensor

Cited by 10 publications

References 30 publications

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Direct Photolithographic Deposition of Color‐Coded Anti‐Counterfeit Patterns with Titania Encapsulated Upconverting Nanoparticles

Synthesis and evaluation of κ2-β-diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WOx thin films

Dioxo–Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition

Contact Info

Product

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Synthesis and evaluation of κ²-β-diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WO_x thin films

Dioxo–Fluoroalkoxide Tungsten(VI) Complexes for Growth of WO_x Thin Films by Aerosol-Assisted Chemical Vapor Deposition