Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen
Yoshihiro Irokawa,
Akihiko Ohi,
Toshihide Nabatame
et al.
Abstract:Changes in the hydrogen-induced Schottky barrier height (Φ
B) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the Φ
B and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The c… Show more
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