In contrast to defect limited yield loss, systematic yield detractors like lithography hotspots may cause a huge yield loss per event. For 45 nm and subsequent technology nodes, those findings are for this reason classified as DRC-like errors and need to be fixed before tape-out. In this paper, we report a comparison − from the use-model point-of-view − of two different methods for removal of lithography hotspots. First, a rip-up & re-routing and second, a guided-repair approach will be presented. This includes a discussion of the impact in the routing context, mainly radius of influence and timing closure, aspects of multiple layer involvement and the layout hierarchy, and the limitations caused by the layout grid.