Proximity-induced topological phases in bilayer graphene

Alsharari, Abdulrhman M.; Asmar, Mahmoud M.; Ulloa, Sergio E.

doi:10.1103/physrevb.97.241104

Cited by 25 publications

(18 citation statements)

References 45 publications

(55 reference statements)

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“…For the case of graphene-WSe 2 vdW systems the SOC induced by proximity in graphene is sufficient to create a band inversion of the spin-split bands close to the original graphene's Dirac point. Such a band inversion could lead to topological phases exhibiting the quantum spin Hall effect in SLG-TMD [110,112,113] or BLG-TMD [114] heterostructures. The enhancement of the SOC in graphene-TMD vdW systems has been observed, indirectly, via weak antilocalization [115][116][117][118][119][120][121] and spin-relaxation measurements.…”

Section: Graphene-tmd Heterostructuresmentioning

confidence: 99%

Van Der Waals Heterostructures with Spin‐Orbit Coupling

Rossi

Triola

2019

Annalen der Physik

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Herein, recent work on van der Waals (vdW) systems in which at least one of the components has strong spin‐orbit coupling is reviewed, focussing on a selection of vdW heterostructures to exemplify the type of interesting electronic properties that can arise in these systems. First a general effective model to describe the low energy electronic degrees of freedom in these systems is presented. The model is then applied to study the case of (vdW) systems formed by a graphene sheet and a topological insulator. The electronic transport properties of such systems are discussed and it is shown how they exhibit much stronger spin‐dependent transport effects than isolated topological insulators. Then, vdW systems are considered in which the layer with strong spin‐orbit coupling is a monolayer transition metal dichalcogenide (TMD) and graphene‐TMD systems are briefly discussed. In the second part of the article, a case is discussed in which the vdW system includes a superconducting layer in addition to the layer with strong spin‐orbit coupling. It is shown in detail how these systems can be designed to realize odd‐frequency superconducting pair correlations. Finally, twisted graphene‐NbSe2 bilayer systems are discussed as an example in which the strength of the proximity‐induced superconducting pairing in the normal layer, and its Ising character, can be tuned via the relative twist angle between the two layers forming the heterostructure.

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Section: Graphene-tmd Heterostructuresmentioning

confidence: 99%

Van Der Waals Heterostructures with Spin‐Orbit Coupling

Rossi

Triola

2019

Annalen der Physik

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“…The Rashba SOC strength induced by external electric fields [5,24,25] is far to be sufficient for the TI phase transition. The Rashba SOC could be enhanced by constructing a curve surface [26,27], substrate proximity effect [28][29][30][31] or adatom doping [32,33]. In the vicinity of substrate consisted of heavy metal [34][35][36], the crystal field is largely enhanced, which gives rise to sizeable Rashba SOC.…”

Section: Introductionmentioning

confidence: 99%

Topological phase and chiral edge states of bilayer graphene with staggered sublattice potentials and Hubbard interaction

Luo

2018

J. Phys. Commun.

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Gated heterostructures containing bilayer graphene with staggered sublattice potentials are investigated by tight binding model with Rashba spin-orbital coupling and Hubbard interaction. The topological phase diagrams depend on the combinations of substrates and the Hubbard interaction. The presence of the staggered sublattice potential favor the topological phase transition with small Rashba spin-orbital coupling strength. The presence of the Hubbard interaction modified the topological phase boundaries, increasing the minimal spin-orbital coupling strength for topological phase transition. A phase space of topological semi-metal with indirect band gap is identified in the non-interacting systems. For the bilayer graphene with different staggered sublattice potentials in the two layers, the conditions for the zigzag nanoribbons to host edge polarized chiral edge states are discussed. The conditions require moderate or vanishing Rashba spin-orbital coupling strength, as well as proper range of the gate voltage. The conditions for the systems with and without the Hubbard interaction are compared. The edge polarization can be controlled by the gate voltage.

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“…To describe the low-energy spectrum of a commensurate FM/TMD heterostructure [19,44], we generalize a successful 3OTB model [40] to include magnetic exchange field effects [45]. The model has relevant lattice symmetries and has been proven to reliably describe TMD ribbons [34] and flakes in diverse situations [46][47][48][49]. The nearly commensuration of the MoTe 2 /EuO structure [ 19,25], as the EuO (111) surface and TMD lattice have only a 2.7% mismatch, incorporates the substrate effects into the pristine MoTe 2 as on-site magnetic exchange and Rashba fields, as H MoTe2/EuO = H MoTe2 + H ex + H R [45].…”

mentioning

confidence: 99%

Tunable Spin-Polarized Edge Currents in Proximitized Transition Metal Dichalcogenides

et al. 2019

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We explore proximity-induced ferromagnetism on transition metal dichalcogenides (TMDs), focusing on molybdenum ditelluride (MoTe2) ribbons with zigzag edges, deposited on ferromagnetic europium oxide (EuO). A tight-binding model incorporates exchange and Rashba fields induced by proximity to EuO or similar substrates. For in-gap Fermi levels, electronic modes in the nanoribbon are localized along the edges, acting as one-dimensional (1D) conducting channels with tunable spinpolarized currents. TMDs on magnetic substrates can become very useful in spintronics, providing versatile platforms to study proximity effects and electronic interactions in complex 1D systems. arXiv:1807.05316v2 [cond-mat.mes-hall]

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Proximity-induced topological phases in bilayer graphene

Cited by 25 publications

References 45 publications

Van Der Waals Heterostructures with Spin‐Orbit Coupling

Van Der Waals Heterostructures with Spin‐Orbit Coupling

Topological phase and chiral edge states of bilayer graphene with staggered sublattice potentials and Hubbard interaction

Tunable Spin-Polarized Edge Currents in Proximitized Transition Metal Dichalcogenides

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