Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Kononov, A.; Kostarev, V. A.; Semyagin, B. R.; Preobrazhenskii, V. V.; Putyato, М. А.; Emelyanov, E. A.; Deviatov, E. V.

doi:10.1103/physrevb.96.245304

Cited by 18 publications

(35 citation statements)

References 44 publications

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“…Interestingly, we find at low voltages two types of behaviors for the conductance: the one discussed previously showing a minimum in the conductance (compare the black line in Figure with Figure a), and one with a clear maximum at finite voltage (all the curves except than black in Figure ). These two types of behavior resemble those observed recently by Kononov et al., who measured the differential resistance of a superconducting InAs/GaSb double QW junction for different width of the InAs gas. In their explanation, the different behaviors of the differential resistance is associated with the variation of the CB/VB overlap and with the presence of proximitized superconducting region with a smaller gap

{normalΔ}^{'} < Δ

.…”

Section: Differential Conductance and Differential Resistancesupporting

confidence: 87%

“…Specifically, we focus on a setup consisting of an SM “sandwiched” between a normal and a superconductor electrode (see Figure a), which is similar to the one explored in refs. []. These experiments showed the presence of a zero‐bias anomaly in the differential resistance compatible with the size of the estimated EI gap of these systems.…”

Section: Introductionsupporting

confidence: 64%

“…Our goal is to propose a direct electrical measurement scheme able to determine the size of the EI gap. At the end of the section, we provide a comparison with the experimental results by Kononov et al …”

Section: Differential Conductance and Differential Resistancementioning

confidence: 95%

“…Moreover, as in the experiment of ref. [], the measured differential resistance of the two observed behaviors (black and green curves in Figure b) differ by a factor larger than 20. This could also be explained from our assumption that an EI is formed between the electrodes.…”

Section: Differential Conductance and Differential Resistancementioning

confidence: 97%

“…In Section , we present results for the differential conductance of a two‐terminal system, and we contrast them with the experiments on differential resistance in refs. [].…”

Section: Introductionmentioning

confidence: 99%

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Quantum Transport Properties of an Exciton Insulator/Superconductor Hybrid Junction

2018

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A theoretical study of electronic transport in a hybrid junction consisting of an excitonic insulator sandwiched between a normal and a superconducting electrode is presented. The normal region is described as a two‐band semi‐metal and the superconducting lead as a two‐band superconductor. In the excitonic insulator region, the coupling between carriers in the two bands leads to an excitonic condensate and a gap Γ in the quasi‐particle spectrum. Four different scattering processes at both interfaces are identified: Two types of normal reflection, intra‐ and inter‐band; and two different Andreev reflections, one retro‐reflective within the same band and one specular reflective between the two bands. The differential conductance of the structure is calculated and the existence of a minimum at voltages of the order of the excitonic gap is shown. The findings are useful toward the detection of the excitonic condensate and provide a plausible explanation for recent transport experiments on HgTe quantum wells and InAs/GaSb bilayer systems.

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{normalΔ}^{'} < Δ

.…”

Section: Differential Conductance and Differential Resistancesupporting

confidence: 87%

Section: Introductionsupporting

confidence: 64%

Section: Differential Conductance and Differential Resistancementioning

confidence: 95%

Section: Differential Conductance and Differential Resistancementioning

confidence: 97%

“…In Section , we present results for the differential conductance of a two‐terminal system, and we contrast them with the experiments on differential resistance in refs. [].…”

Section: Introductionmentioning

confidence: 99%

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Quantum Transport Properties of an Exciton Insulator/Superconductor Hybrid Junction

2018

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Electrical tuning of helical edge states in topological multilayers

Campos¹,

Sandoval²,

Diago‐Cisneros³

et al. 2019

J. Phys.: Condens. Matter

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Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states of matter. Such structures allow the band-gap inversion with electrons and holes confined in adjacent layers, providing a fertile ground to tune the corresponding topological properties. Using a full 3D 8-band k · p method we investigate the inverted band structure of GaSb/InAs/GaSb and InAs/GaSb/InAs multilayers and the behavior of the helical edge states, under the influence of an electric field applied along the growth direction. By tuning the electric field modulus, we induce the change of the energy levels of both conduction and valence bands, resulting in a quantum spin Hall insulator phase where the helical edge states are predominantly confined in the GaSb layer. In particular, we found that InAs/GaSb/InAs has a large hybridization gap of about 12 meV and, therefore, are promising to observe massless Dirac fermions with a large Fermi velocity. Our comprehensive characterization of GaSb/InAs multilayers creates a basis platform upon which further optimization of III-V heterostructures can be contrasted. arXiv:1903.02687v3 [cond-mat.mes-hall]

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Charge transport spectra in superconductor-InAs/GaSb-superconductor heterostructures

Sun¹,

Bao²,

Yu³

et al. 2021

Nanotechnology

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Charge transport physics in InAs/GaSb bi-layer systems has recently attracted attention for the experimental search for two-dimensional topological superconducting states in solids. Here we report measurement of charge transport spectra of nano devices consisting of an InAs/GaSb quantum well sandwiched by tantalum superconductors. We explore the current-voltage relation as a function of the charge-carrier density in the quantum well controlled by a gate voltage and an external magnetic field. We observe three types of differential resistance peaks, all of which can be effectively tuned by the external magnetic field, and, however, two of which appear at electric currents independent of the gate voltage, indicating a dominant mechanism from the superconductor and the system geometry. By analyzing the spectroscopic features, we find that the three types of peaks identify Andreev reflections, quasi-particle interference, and superconducting transitions in the device, respectively. Our results provide a basis for further exploration of possible topological superconducting state in the InAs/GaSb system.

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Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Cited by 18 publications

References 44 publications

Quantum Transport Properties of an Exciton Insulator/Superconductor Hybrid Junction

Quantum Transport Properties of an Exciton Insulator/Superconductor Hybrid Junction

Electrical tuning of helical edge states in topological multilayers

Charge transport spectra in superconductor-InAs/GaSb-superconductor heterostructures

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