Proximity Effect of Neighbour Victim Lossy Interconnects on a Single Attacker and Vice Versa

Ponchel, Freddy; Legier, Jean-François; Paleczny, E.; Seguinot, C.; Deschacht, D.

doi:10.1109/isicir.2007.4441884

Cited by 2 publications

(2 citation statements)

References 9 publications

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“…From a numerical point of view, we have implemented a second home made numerical software based on a two dimensional tangential vector finite element method named "ELFI." [22][23][24] All widths and thicknesses are precisely measured and act as data entries. Real and imaginary parts of dielectric or magnetic constant of any layer are changeable parameters.…”

Section: B Protocol Overview For Measurement and Extraction Of Bst Th...mentioning

confidence: 99%

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method

Ponchel

Midy

Legier

et al. 2010

Journal of Applied Physics

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( Ba , Sr ) TiO 3 (BST) thin films were deposited on high resistivity silicon substrates by in situ rf magnetron sputtering. A buffer layer was used to improve the cristallinity of the films, the composition was fixed to Ba/Sr=30/70. The relative permittivity and the losses were measured up to 60 GHz using coplanar strip lines. The dispersion of the permittivity and the losses has been determined with a home made numerical code based on finite elements: ELFI. We show that, with the measurements of the scattering parameters coupled with ELFI, it is possible to know the BST complex permittivity over a very broad frequency band. The BST films deposited by in situ (700 °C) present excellent properties between 1 to 60 GHz. The relative permittivity is in the order of 270 and the losses are very small 0.09 at 60 GHz. These structures BST/silicon high resistivity show good potentialities for devices microwaves applications which need future integration in a silicon environment.

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Section: B Protocol Overview For Measurement and Extraction Of Bst Th...mentioning

confidence: 99%

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method

Ponchel

Midy

Legier

et al. 2010

Journal of Applied Physics

Self Cite

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“…5 This complex value is also the solution of an eigenvalue problem based on a full wave home made vector finite element method. 9 We match these numerical propagation constants to the measured ones by varying the unknown complex permittivity or permeability or conductivity of the layer of interest. Before measuring the BST thin-film properties, our objective is to define, with the corresponding measurement file, the conductivity of the electrodes and the permittivity of the hrSi substrate using the MCPW ͑without BST layer͒ localized on the same wafer, just near the BST/Siintegrated structure described above.…”

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confidence: 99%

Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

Ponchel

Legier

Soyer

et al. 2010

Applied Physics Letters

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400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1 μm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. Permittivity, loss tangent, and tunability are extracted through measurements and home made finite element analysis. Tunability of 33% and 29%, with 30 V maximum applied voltage (electric field of 300 kV/cm), are measured at 5 GHz and 60 GHz, respectively, while the dielectric losses evolve from 0.5% to 5%. A brief highlight is proposed about tunable silicon integrated quarter wavelength transformer potentialities for impedance matching.

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Proximity Effect of Neighbour Victim Lossy Interconnects on a Single Attacker and Vice Versa

Cited by 2 publications

References 9 publications

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method

Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

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