Proximity effect correction by the GHOST method using a scattering stencil mask

Yamashita, Hiroshi; Nomura, Eiichi; Manako, Shoko; Kobinata, H.; Nakajima, Ken; Nozue, Hiroshi

doi:10.1116/1.591084

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…The shape modification and the ghost method are two strong candidates. 3,8 The shape modification method seems desirable because it does not require additional complexities, once corrected masks are made. Ghost methods that use scattered electrons from nonfeature areas on the mask as the second exposure utilizing an annular beam limiting aperture at the crossover have been reported.…”

Section: Introductionmentioning

confidence: 99%

Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Osawa¹,

Takahashi²,

Sato³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Introductionmentioning

confidence: 99%

Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Osawa¹,

Takahashi²,

Sato³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The fact that the pattern should be written twice decreases the throughput of the process yet it is easier to use because no computations are needed. 33,42 Now that all these issues have been understood, it is necessary to clarify that our system has NPGS software for EBL, which does not have any tools for correction of proximity effect. By 2008, a new software hardware system called Nanomaker was released; this new packet was able to do EBL on SEM based systems but the novel thing was that this system has tools for proximity effect correction.…”

Section: Electron Interactionsmentioning

confidence: 99%

Nanofabrication of Optofluidic Photonic Crystal Resonators for Biosensing

Junta¹,

Bolivar²

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Nanofabrication of Optofluidic Photonic Crystal Resonators for Biosensing Henry Andagana Advances in nanofabrication have made possible the development of novel nanophotonics based on Photonic Crystal (PhC) structures. Different types of biosensors have been proposed to take advantage of the unique optical properties of PhCs, which, when combined with microfluidics, provide an enabling approach for biomolecule analysis. In this thesis, nanofabrication of a new biosensor structure integrating a 2D PhC nanocavity resonator with an optofluidic channel is described. The recipes for e-beam lithography of PhC and PhC nanocavity patterns were optimized by carefully tuning the e-beam dose as well as control of the resist baking and development conditions. Two PhC fabrication processes based on pattern transfers by lift-off and etch-back were compared. The plasma etching of Si, GaN, and ITO were optimized to obtain fast etching rates, vertical profiles as well as high etch selectivities over different hard masks including Si 3 N 4 , SiO 2 , and Ni. Si, GaN and ITO PhC structures with airhole diameters in the range of 100-200 nm were fabricated using the developed processes. To facilitate the integration of the PhC structures with microfluidic channels, the PhC airholes were sealed with a SiO 2 thin film formed by glancing angle deposition. By gradually reducing the flux angle toward normal during deposition, we successfully deposited uniform SiO 2 capping layers with minimal material extended down into the PhC airholes. Finally, suspended Si PhC slabs were fabricated on a Si-on-Oxide substrate using an integrated procedure which consists of e-beam lithography, pattern transfer into Si by CF 4 plasma etching, and a selective etch of the underlying SiO 2 sacrificial layer in HF. The suspended PhC structure provides an important test bed for measuring resonant fluorescence of biomolecules in PhC nanocavities in the IR range.iii

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Monte Carlo simulation of electron transmission through the scattering masks with angular limitation for projection electron lithography

Sun

Ding

et al. 2002

Journal of Applied Physics

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We calculated electron energy loss and angular distributions for electrons transmitted through masks for electron projection lithography by a Monte Carlo (MC) simulation method. After comparing the improved continuous slowing down approximation model, the direct MC model, and the intensive direct MC model, the last model was used. The energy loss distributions calculated by the latter two models are much better than by the first model and the intensive direct MC model can be applied to more materials than the direct MC model. The effect of mask thickness on energy loss, transmission, and contrast was analyzed. We found that, for a W/Cr/Si3N4 mask, the thicker the scattering layer the wider the angular distribution, the lower the transmission, and the higher the contrast. But the thickness of the membrane Si3N4 layer has less effect on the contrast.

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Proximity effect correction by the GHOST method using a scattering stencil mask

Cited by 4 publications

References 13 publications

Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Nanofabrication of Optofluidic Photonic Crystal Resonators for Biosensing

Monte Carlo simulation of electron transmission through the scattering masks with angular limitation for projection electron lithography

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