2017
DOI: 10.1021/acs.nanolett.7b02511
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Proximity Band Structure and Spin Textures on Both Sides of Topological-Insulator/Ferromagnetic-Metal Interface and Their Charge Transport Probes

Abstract: The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi2Se3 and Co or Cu layers comprising the interface. In contrast to widely assumed but thinly tested Dirac cone gapped by the proximity exchange fi… Show more

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Cited by 67 publications
(62 citation statements)
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“…First, orbital hybridization between the transition metal and the topological insulator substantially alters the surface states at Fermi energy. The presence of magnetic adatoms shifts the Dirac cone downward in energy (Honolka et al, 2012;Scholz et al, 2012;Ye et al, 2012), and favor the presence of additional metallic bands with Rashba-like character across the Fermi level (Marmolejo-Tejada et al, 2017;Zhang et al, 2016a).…”
Section: G Three-dimensional Topological Insulatorsmentioning
confidence: 99%
“…First, orbital hybridization between the transition metal and the topological insulator substantially alters the surface states at Fermi energy. The presence of magnetic adatoms shifts the Dirac cone downward in energy (Honolka et al, 2012;Scholz et al, 2012;Ye et al, 2012), and favor the presence of additional metallic bands with Rashba-like character across the Fermi level (Marmolejo-Tejada et al, 2017;Zhang et al, 2016a).…”
Section: G Three-dimensional Topological Insulatorsmentioning
confidence: 99%
“…On the other hand, SOT-MRAM has a disadvantage of being a three-terminal device. [50], and panels (c) and (g) are adapted from Ref. [49].…”
Section: What Is Spin Torque and Why Is It Useful?mentioning
confidence: 99%
“…9(g). This points out at a knob that can be exploited to enhance SOT by searching for optimal combination of materials capable to generate penetration of SOC over long distances within the FM layer [50]. In fact, in the case of FM/TI and FM/monolayer-TMD heterostructures, proximity SOC coupling within the FM layer is crucial for SOT efficiency [23] where it has been considered [20] that applied current will be shunted through the metallic FM layer and, therefore, not contribute to nonequilibrium spin density generation at the interface where SOC and thereby induced in-plane spin textures are naively assumed to reside.…”
Section: Example: Spin-orbit Torque In Fm/monolayer-tmd Bilayersmentioning
confidence: 99%
“…This is due to the proximity effect where evanescent wavefunctions from TaSe 2 penetrate [Figs. 2 and 5] up to the first monolayer of CrI 3 to make it a current carrier, while also bringing [36] SOC from TaSe 2 to ensure that S CD (r) is not collinear to B XC (r). The giant SOC hosted by TaSe 2 itself due to inversion symmetry breaking in ultrathin layers of transition metal dichalcogenides (TMDs) [37,38] is confirmed by large S CD (r) within the spatial region of TaSe 2 monolayer in Fig.…”
mentioning
confidence: 99%