Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure

Hayashida, Mitsuki; Hagino, K.; Kohmura, Takayoshi; Kitajima, Masatoshi; Yarita, Keigo; Oono, Kenji; Negishi, Kousuke; Tsuru, Takeshi Go; Tanaka, Takaaki; Uchida, Hiroyuki; Kayama, Kazuho; Kodama, Ryota; Mori, Koji; Takeda, Ayaki; Nishioka, Yusuke; Hida, Takahiro; Yukumoto, Masataka; Arai, Y.; Kurachi, Ikuo; Kitamura, Hisashi; Kawahito, Shoji; Yasutomi, Keita

doi:10.1117/1.jatis.7.3.036001

Cited by 4 publications

(1 citation statement)

References 18 publications

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“… – 10 The total fluence at each LET was 6×107−9×109cm−2, and the flux was 9×103−2×106cm−2 normals−1. Since the XRPIX device with PDD structure was established to work up to ∼100 krad≃6.3×109 MeV/mg in our previous work, 11 we regulated the total fluence at each LET not to exceed it.…”

Section: Heavy-ion Irradiation Experimentsmentioning

confidence: 99%

Single event tolerance of x-ray silicon-on-insulator pixel sensors

Hagino

Hayashida

Kohmura

et al. 2022

J. Astron. Telesc. Instrum. Syst.

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We evaluate the single event tolerance of the x-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future x-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 to 68 MeV∕ðmg∕cm 2 Þ. From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be 3.4 þ2.9 −0.9 × 10 −10 cm 2 ∕bit and 7.3 þ1.9 −3.5 MeV∕ðmg∕cm 2 Þ, respectively. Using these values, the SEU rate in orbit is estimated to be ≲0.1 event∕year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.

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