2005
DOI: 10.1109/radecs.2005.4365651
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Proton Radiation effects in medium/large area photodiodes and high power LED for Optical Wireless Links for intra Satellite communications (OWLS)

Abstract: LEDs and photodiodes (PDs) suitable for OWLS were irradiated with 52 MeV protons and up to 2.8 1012 p/cm2 (in 5 steps). Electrical and optoelectronics parameters have been characterized during the test (characteristic I-V curve, dark current, PD responsivity and LED optical power) results about degradation and are reported. Also, the differences in degradation rate for several biasing conditions during irradiation have been studied.

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Cited by 11 publications
(2 citation statements)
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“…The driver circuit has a medium to high-speed Cutoff-Active switching transistor (Rad-Hard) connected to one or two LEDs (Osram SFH4248). This LED was tested to characterize Displacement Damage (DD) [16]. To reduce the peak currents an R-C low filter power input is used.…”
Section: A Emission Modulementioning
confidence: 99%
“…The driver circuit has a medium to high-speed Cutoff-Active switching transistor (Rad-Hard) connected to one or two LEDs (Osram SFH4248). This LED was tested to characterize Displacement Damage (DD) [16]. To reduce the peak currents an R-C low filter power input is used.…”
Section: A Emission Modulementioning
confidence: 99%
“…With a conservative photodiode receiver rise time of 1ns, and an LED rise time of around 150ns, the LED rise time will be the limiting factor on communication speed. (AlGaAs heterojunction emitters have previously been recommended for their fast rise times and their decreased sensitivity to displacement damage when compared to homojunction LEDs [21]. )…”
Section: Figure 1: Led/photodiode Links Between Satellitesmentioning
confidence: 99%