Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes

Khanna, Shyam M.; Estan, D.; Houdayer, A.; Liu, H.C.; Dudek, R.

doi:10.1109/tns.2004.839105

Cited by 29 publications

(28 citation statements)

References 20 publications

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“…4 GaN-based optical emitters (LEDs and laser diodes) have been a tremendous success story and although their applications are less The two most common GaN-based devices device structures for which radiation damage studies have been performed. A schematic of an AlGaN/GaN HEMT is shown at top, while a schematic diagram of an AlGaN/InGaN QW LED is shown at bottom (after Ionescu et al 4 and Khanna et al 171 ).…”

Section: Q37mentioning

confidence: 99%

“…[158][159][160][161][162][163][164][165][166][167][168][169][170][171] Recently, the application of GaN-based LEDs has been extended to satellite communication systems for weather forecasting or broadband data transmission due to their high radiation hardness. The materials used in GaN-based LEDs have small lattice constants (a = 3.189 Å, c = 5.186 Å for wurtzite GaN structure) due to their strong bond energies and therefore show superior resistance to damage under radiation environments due to the higher displacement energies compared with other semiconductor systems such as the GaAs used in red LEDs (a = 5.653 Å).…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…Khanna et al 171 showed that the radiation hardness for light emission in GaN LEDs is substantially better at low temperatures, as determined by measurements of light emission at room and low temperatures from GaN LEDs following proton irradiation at room and low temperatures. The enhanced low-temperature radiation hardness for light emission in these LEDs was explained in terms of an improvement in radiative efficiency due to a reduction of nonradiative transition probability at low temperatures.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…Further, lattice displacement damage in these devices due to irradiation at room temperature was compared with the corresponding damage at low temperatures and was found to be dependent on irradiation temperature. 168,171 They also examined the proton energy dependence of emission intensity for blue GaN LEDs after proton irradiation with energies from 2-115 MeV at fluences varying from 10 11 to 10 15 cm −2 . There was more lattice displacement damage in GaAs LEDs following irradiation at low temperatures due to reduced annealing during irradiation.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…The light output data for both GaAs QW and GaN QW LEDs, and the I-V data for GaAs QW LEDs suggested that there is less lattice damage following low temperature irradiation than for irradiation at room temperature. 171 The proton energy dependence of light output degradation in GaN LEDs was also examined for energies from 2-115 MeV 168 and modeled according to the theory of Rose and Barnes. 172 The normalized light output I irr /I o at different energies from these LEDs taken at a fixed dc current of 0.3 mA versus the fluence φ is shown in Figure 20.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

267

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Q37mentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

See 3 more Smart Citations

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

267

130

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Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Proton radiation effects in nitride lasers and light emitting diodes

Gonda

Tsutsumi

Ito

et al. 2007

Physica Status Solidi (a)

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PACS 42.55. Px, 61.80.Jh Nitride laser diodes and light emitting diodes were irradiated with 200-, 80-and 10-MeV protons. The threshold current of violet laser diodes increased with increasing proton fluence to 1 × 10 14 p/cm 2 . The increase in threshold current is considerably small compared with that of AlGaAs laser diodes. Proton energy dependence of the change of threshold current was a little bit different from that of GaN NIEL. Oscillation wavelength did not change before and after irradiation. The defect levels made by proton irradiation do not seem to be radiative recombination centers.

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Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes

Cited by 29 publications

References 20 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Radiation Damage in GaN‐Based Materials and Devices

Proton radiation effects in nitride lasers and light emitting diodes

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