Proton-induced transients in optocouplers: in-flight anomalies, ground irradiation test, mitigation and implications

LaBel, Kenneth A.; Marshall, P.W.; Marshall, C.J.; D'Ordine, M.; Carts, M.A.; Lum, G.K.; Kim, H.S.; Seidleck, C.M.; Powell, T.; Abbott, Russ; Barth, J.L.; Stassinopoulos, E. G.

doi:10.1109/23.658957

Cited by 41 publications

(24 citation statements)

References 21 publications

(45 reference statements)

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“…In that paper, the angle dependence was determined to be due to direct ionization effects due to protons. A similar effect has been noted in optocouplers [63], [67], [69]. The cross section for these devices depends on the superposition of the cross section due to direct ionization effects with that for indirect ionization effects.…”

Section: F Sets In Optocouplers and Optical Data Linkssupporting

confidence: 63%

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Reed

Kinnison

Pickel

et al. 2003

IEEE Trans. Nucl. Sci.

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Abstract-Over the past 27 years, or so, increased concern over single-event effects (SEEs) in spacecraft systems has resulted in research, development, and engineering activities centered around a better understanding of the space radiation environment, SEE predictive methods, ground test protocols, and test facility developments. This research has led to fairly well developed methods for assessing the impact of the space radiation environment on systems that contain SEE sensitive devices and the development of mitigation strategies either at the system or device level. However, as new technology has emerged, these ground test and predictive methods have certain short falls.

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Section: F Sets In Optocouplers and Optical Data Linkssupporting

confidence: 63%

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Reed

Kinnison

Pickel

et al. 2003

IEEE Trans. Nucl. Sci.

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“…Figure 4 The upper picture illustrates the long pathlengths possible when a proton is incident at 90". The lower diagram shows the dense ionization produced by the recoils generated in a nuclear reaction As discussed in [21], one would expect a significantly narrower angular distribution based on the very small acceptance angle about 90" required to traverse the length of the diode. We do not fully understand why the observed distribution is broader.…”

Section: A 840 Nmmentioning

confidence: 98%

Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

Marshall

Carts

et al. 1998

IEEE Trans. Nucl. Sci.

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We present a study of proton transient effects in metalsemiconductor-metal (MSM) photodetectors, which demonstrates their inherent advantage for minimizing Single Event Effects (SEES) in proton environments. Upset mechanisms are characterized for 830 nm GaAs and 1300 nm InGaAs detectors. Only protons incident at grazing angles are likely to cause a bit errors by direct ionization, The MSM technology appears to be a more robust to single bit errors than thicker 1300 nm p-i-n diode structures which we have previously shown to be susceptible to errors from direct ionization events at all angles, and also at relatively high optical powers [l].For a given receiver, the relative contributions of direct ionization and nuclear reaction upset mechanisms at a specific data rate and optical power are determined by the geometry of the charge collection volume of the detector. We show that state-of-the-art p-i-n detectors can also display a reduced sensitivity to direct ionization by incident protons except at grazing angles.

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“…Investigations by LaBel et al [1] and Reed et al [2] suggest that high-bandwidth optocouplers (GaAs LED and Si photodiode) are more susceptible to transient effects than low-bandwidth optocouplers. A review of single-event effects on a variety of spacebased devices was published recently with an excellent list of references [3].…”

Section: Gaas Vcsels and Photodiodesmentioning

confidence: 99%

Final report on LDRD project 52722 : radiation hardened optoelectronic components for space-based applications.

Hargett¹,

Serkland²,

Blansett³

et al. 2003

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This report describes the research accomplishments achieved under the LDRD Project "Radiation Hardened Optoelectronic Components for Space-Based Applications." The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.

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Proton-induced transients in optocouplers: in-flight anomalies, ground irradiation test, mitigation and implications

Cited by 41 publications

References 21 publications

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

Final report on LDRD project 52722 : radiation hardened optoelectronic components for space-based applications.

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