Proton-induced transients and charge collection measurements in a LWIR HgCdTe focal plane array

Marshall, P.W.; Hubbs, John E.; Arrington, Douglas C.; Marshall, C.J.; Reed, Robert A.; Gee, G.; Pickel, J.C.; Ramos, Rudolfo A.

doi:10.1109/tns.2003.820749

Cited by 11 publications

(7 citation statements)

References 6 publications

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“…A connection between and the level of displacement damage can be established by assuming a linear increase in the defect concentration with , which the data from these experiments supports. Recall that when dominated by Shockley-Read-Hall (SRH) recombination and assuming a single active recombination level, is related to according to (4) where is the minority carrier capture cross-section, is the carrier thermal velocity equal to , is Boltzmann's constant and is effective mass. [ …”

Section: A Degradation Rates and Damage Factorsmentioning

confidence: 99%

“…Here, will be diffusion-limited, but is dominated by SRH-recombination, according to (4), and thus is still limited by . In the regime, which is expected for unipolar barrier detectors at lower , where is expected to be lowest, the diffusion-limited, dark current density is given by (7) where is the absorber thickness, is the intrinsic carrier concentration and is the doping concentration.…”

Section: B Dark Current Density Damage Factormentioning

confidence: 99%

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Proton Irradiation Effects on the Performance of III-V-Based, Unipolar Barrier Infrared Detectors

Morath

Cowan

Treider

et al. 2015

IEEE Trans. Nucl. Sci.

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An examination of the collective results from recent experiments quantifying the performance degradation rates of III-V-based, unipolar barrier infrared detectors with various designs and materials, cutoff wavelengths and operating conditions due to 63 MeV proton irradiation is presented. Empirical relationships were established between the radiation damage factors for dark current density, lateral optical collection length, and quantum efficiency and the inverse product of the detectors' cutoff wavelength and operating temperature. Fitting the dark current density damage factor's empirical relationship reflected these detectors' tendency to remain diffusion-limited during irradiation, which was previously established using Arrhenius-analysis of the post-irradiation, temperature-dependent dark current measurements on each. Collectively, the results affirmed the performance degradation stemmed from a reduction of the minority carrier recombination lifetime via generation of additional defects by proton-induced displacement damage. For comparing detector's radiation-tolerance, the results indicated that damage factors alone were not ideal, but their empirical relationships would serve as heuristics in this role.Index Terms-Damage factor, infrared detector, minority carrier lifetime, nBn, proton irradiation, unipolar barrier detector.

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Section: A Degradation Rates and Damage Factorsmentioning

confidence: 99%

Section: B Dark Current Density Damage Factormentioning

confidence: 99%

Proton Irradiation Effects on the Performance of III-V-Based, Unipolar Barrier Infrared Detectors

Morath

Cowan

Treider

et al. 2015

IEEE Trans. Nucl. Sci.

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“…The effective ionization potential for long-wavelength cutoff HgCdTe is ∼1.04 eV∕e − , corresponding to an efficiency of converting energy into electron-hole pairs of about 10% (the band gap energy is about 0.1 eV). 16 The total charge generated by high-energy protons is approximately 17 E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 0 3 ; 6 3 ; 1 8 7 charge ≈ pathlength Ã ðdE∕dxÞ∕ionization energy per e − :…”

Section: Proton Stopping Powermentioning

confidence: 99%

Proton irradiation results for long-wave HgCdTe infrared detector arrays for Near-Earth Object Camera

Dorn

Pipher

McMurtry

et al. 2016

J. Astron. Telesc. Instrum. Syst

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Abstract. HgCdTe detector arrays with a cutoff wavelength of ∼10 μm intended for the Near-Earth Object Camera (NEOCam) space mission were subjected to proton-beam irradiation at the University of California Davis Crocker Nuclear Laboratory. Three arrays were tested-one with 800-μm substrate intact, one with 30-μm substrate, and one completely substrate-removed. The CdZnTe substrate, on which the HgCdTe detector is grown, has been shown to produce luminescence in shorter wave HgCdTe arrays that causes an elevated signal in nonhit pixels when subjected to proton irradiation. This testing was conducted to ascertain whether or not full substrate removal is necessary. At the dark level of the dewar, we detect no luminescence in nonhit pixels during proton testing for both the substrate-removed detector array and the array with 30-μm substrate. The detector array with full 800-μm substrate exhibited substantial photocurrent for a flux of 103 protons∕cm 2 s at a beam energy of 18.1 MeV (∼750 e − ∕s) and 34.4 MeV (∼65 e − ∕s). For the integrated space-like ambient proton flux level measured by the Spitzer Space Telescope, the luminescence would be well below the NEOCam dark current requirement of <200 e − ∕s, but the pattern of luminescence could be problematic, possibly complicating calibration. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…For space applications, it is important to understand the effects of radiation on these devices. Radiation damage of HgCdTe photodiode arrays without avalanche gain have been studied extensively [21]- [28] and the results show they are much less susceptible to radiation damage than their silicon counterparts [29]- [31]. However, due to the relatively high electron multiplication gain, HgCdTe APDs are expected to be more susceptible to space radiation damage.…”

Section: Introductionmentioning

confidence: 99%

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Sun

Abshire

Lauenstein

et al. 2021

IEEE Trans. Nucl. Sci.

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Space radiation damage and proton induced transient effects were evaluated on 4.4 µm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 µs.

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Proton-induced transients and charge collection measurements in a LWIR HgCdTe focal plane array

Cited by 11 publications

References 6 publications

Proton Irradiation Effects on the Performance of III-V-Based, Unipolar Barrier Infrared Detectors

Proton Irradiation Effects on the Performance of III-V-Based, Unipolar Barrier Infrared Detectors

Proton irradiation results for long-wave HgCdTe infrared detector arrays for Near-Earth Object Camera

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

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