Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation

Jouni, Ali; Sicre, Mathieu; Malherbe, Victor; Mamdy, Bastien; Thery, Thomas; Belloir, Jean-Marc; Soussan, Dimitri; Paoli, Serge De; Lorquet, Vincent; Lalucaa, Valérian; Virmontois, Cédric; Gasiot, Gilles; Goiffon, Vincent

doi:10.1109/tns.2023.3248521

Cited by 9 publications

(3 citation statements)

References 23 publications

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“…Exposed to the space radiation environments will lead to SPAD radiation TID and displacement damage dose (DDD) damage and cause the SPAD performance degeneration. It has been shown that proton irradiation causes displacement damage defects in SPAD [3][4] . These defects include the vacancy (VSi), the substitutional phosphorus (PSi), the double vacancy (VSiVSi), the A-center (VSiOi), the E-center (PSiVSi).…”

Section: Introductionmentioning

confidence: 99%

Study on γ-irradiation effect of silicon single photon avalanche diodes

Xun,

Li,

Liu

et al. 2024

Advanced Fiber Laser Conference (AFL2023)

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In order to study the effect of ionizing radiation damage on the performance of silicon Single Photon Avalanche Diode (SPAD) in space radiation environment, the γ irradiation of SPAD were carried out under different conditions, and the changes of radiation sensitive parameters such as leakage current, dark count rate (DCR), 1/f noise of the SPAD were analyzed. The results show that the leakage current of the SPAD after 50krad(Si) irradiation under zero bias has not significantly changed, but the dark current has increased by a factor of one thousand under operating bias. After the total ionizing dose (TID) of 70krad(Si) γ irradiation, the DCR increased 6600cps under zero bias, but the number is 10100cps under operating bias. The 1/f noise shows that the number of oxide traps and interface traps generated by gamma ionization radiation enhances the fluctuation in carrier numbers, leading to an increase of 1/f noise. The 1/f noise can be reduced by 100℃ annealing after 24h, but it cannot be restored to the level of fresh SPAD.

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Section: Introductionmentioning

confidence: 99%

Study on γ-irradiation effect of silicon single photon avalanche diodes

Xun,

Li,

Liu

et al. 2024

Advanced Fiber Laser Conference (AFL2023)

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“…With the large-scale commercialization and application of low-cost devices in the space field, SPADs are inevitably exposed to proton and electron radiation in the space radiation environment, leading to radiation damage to the SPAD. Recent studies have shown that the radiation effect on Si-based devices mainly causes TID and displacement damage dose (DDD) [23,24]. The energy loss of incident particle ionization leads to the generation of electron hole pairs in irradiated materials, while non-ionization energy loss leads to phonon generation and lattice atomic displacement, resulting in ionization and displacement damage [25,26].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Xun,

Li,

Liu

2024

Electronics

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In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. Comparison experiments of proton and gamma irradiation were performed in the radiation environment of geosynchronous transfer orbit (GTO) with two different radiation shielding designs at the same total ionizing dose (TID). The results show that after 30 MeV and 60 MeV proton irradiation, the leakage current and gain increase, while the spectral response decreases slightly. The leakage current degradation is more severe under the “ON”-bias condition compared to the “OFF”-bias condition, and it is more sensitive to the displacement radiation damage caused by protons compared to gamma rays under the same TID. Further analysis reveals that the non-elastic and elastic cross-section of protons in silicon is 1.05 × 105 times greater than that of gamma rays. This results in SPAD devices being more sensitive to displacement radiation damage than ionizing radiation damage. Under the designed shielding conditions, the leakage current, gain and spectral response parameters of SPADs do not show significant performance degradation in the orbit.

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“…In radiation environments, protons, electrons, γ rays, and heavy ions can cause certain parameters, such as the breakdown voltage, leakage current, DCR, gain, and photon detection efficiency, to deteriorate at different levels through the displacement damage dose (DDD) effect and the Total Ionizing Dose (TID) effect [21,22]. This is due to the point defects in silicon and the interface defects at the Si-SiO 2 interface near STI.…”

Section: Introductionmentioning

confidence: 99%

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Xun,

Li,

Feng

et al. 2024

Electronics

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The effects of proton irradiation on CMOS Single-Photon Avalanche Diodes (SPADs) are investigated in this article. The I–V characteristics, dark count rate (DCR), and photon detection probability (PDP) of the CMOS SPADs were measured under 30 MeV and 52 MeV proton irradiations. Two types of SPAD, with and without shallow trench isolation (STI), were designed. According to the experimental results, the leakage current, breakdown voltage, and PDP did not change after irradiation at a DDD of 2.82 × 108 MeV/g, but the DCR increased significantly at five different higher voltages. The DCR increased by 506 cps at an excess voltage of 2 V and 10,846 cps at 10 V after 30 MeV proton irradiation. A γ irradiation was conducted with a TID of 10 krad (Si). The DCR after the γ irradiation increased from 256 cps to 336 cps at an excess voltage of 10 V. The comparison of the DCR after proton and γ-ray irradiation with two structures of SPAD indicates that the major increase in the DCR was due to the depletion region defects caused by proton displacement damage rather than the Si-SiO2 interface trap generated by ionization.

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Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation

Cited by 9 publications

References 23 publications

Study on γ-irradiation effect of silicon single photon avalanche diodes

Study on γ-irradiation effect of silicon single photon avalanche diodes

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

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