Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

doi:10.3938/jkps.72.920

Cited by 7 publications

(5 citation statements)

References 28 publications

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“…The results show that the electron concentration increases slightly and the electron mobility reduces by 25.9% at the electron fluence of 1 × 10 16 cm −2 . This may be due to the fact that some incident particles may remain in the device structure apart from inducing a reasonable number of defect states [27]. The particles that remained and the induced defects result in the decrease of carrier mobility by scattering.…”

Section: Resultsmentioning

confidence: 99%

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

et al. 2019

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In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 1014 cm−2, 1 × 1015 cm−2, to 1 × 1016 cm−2. Both the channel current and transconductance dramatically decreased as the irradiation fluence rose up to 1 × 1016 cm−2, whereas the specific channel on-resistance (Ron) exhibited an apparent increasing trend. These changes could be responsible for the reduction of mobility in the channel by the irradiation-induced trap charges. However, the kink effect became weaker with the increase of the electron fluence. Additionally, the current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) demonstrated a slightly downward trend as the irradiation fluence rose up to 1 × 1016 cm−2. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance (CGD) and the ratio of gate-drain capacitance and gate-source capacitance (CGD/CGS). Moreover, the increase of Ron may be another important factor for fmax reduction.

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Section: Resultsmentioning

confidence: 99%

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

et al. 2019

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“…After the He + irradiation, the samples were taken from the facility after a few days because the radioactive level of the samples should be below the certain safety level. The previous real-time monitoring of electrical properties of graphene during irradiation shows fast saturating behavior just after the irradiation event [ 26 , 27 ]. Therefore, we may expect the most physical properties of irradiated samples are saturated to certain values when we analyze afterward.…”

Section: Methodsmentioning

confidence: 99%

Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation

et al. 2022

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Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe2 thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 1015 cm−2, we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe2 thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. Graphical Abstract Effect of He+ irradiation on thermoelectric properties of MoSe2 thin films.

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“…For example, Zhen et al [16], found that MIS-HEMT with Al 2 O 3 /SiN x double insulator showed the lowest drain current degradation and the fastest response in the switching test after proton irradiation with 3 MeV proton irradiation, they explained as the relatively large displacement threshold energy of Al 2 O 3 and the better passivation effect of SiN x . Lee et al [17], found that high-energy proton irradiation can change the output characteristics of HEMT without destroying the crystal structure. Neha et al [18], studied the effect of proton irradiation on AlGaN/GaN HEMT with double field plate structure and found that the double long plate structure has a good radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton

Lu,

Cao,

et al. 2024

Phys. Scr.

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In this paper, proton irradiations on Cascode GaN HEMT power device with an energy of 80 MeV and fluences of 2×1011 p/cm2 and 6×1011 p/cm2 have been carried out, where the threshold voltages drifted negatively by 20.55% and 28.17%, respectively. After two months of room temperature annealing, the threshold voltages recovered 0.22 V and 0.27 V, respectively. The ionizing deposition energy (IEL) was simulated by using Monte Carlo software and TCAD, it the results showed that the value of IEL in Si MOSFET is 5~6 orders higher than that in GaN HEMT, while the value of the non-ionizing energy loss (NIEL) is one order higher than that in GaN HEMT. It means that the proton irradiation on the Cascode depleted GaN HEMT is more prone to produce displacement damage. As a large number of electrons and holes pairs were existed on the incident path of Si MOSFET under the proton irradiation, the produced electron will be captured by the gate oxide traps at the SiO2/Si interface, and the holes be captured by the defects generated in displacement damage, resulting in the accumulation of oxide trapped charges. Then, the electrical performance of Si MOSFET degrades seriously, thereby affecting the performance of the entire device. The studies will be helpful for the radiation hardening of Cascode GaN HEMT.

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Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

Cited by 7 publications

References 28 publications

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation

Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton

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