Proton Diffusion Mechanism in Amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

Godet, Julien; Pasquarello, Alfredo

doi:10.1103/physrevlett.97.155901

Cited by 66 publications

(35 citation statements)

References 31 publications

(34 reference statements)

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“…19 Reversible motion of protons in SiO 2 has been demonstrated by memory effects occurring in Si/ SiO 2 / Si devices, where protons shuttle through the SiO 2 from one Si layer to the other. 20 DFT calculations on transport of protons in SiO 2 predict an activation energy of about 0.5 eV, 21 which is close to the 0.6 eV activation energy found in bias-stress experiments on different organic semiconductors. 8 This strongly supports our proposition that proton motion in the SiO 2 causes the bias-stress effect.…”

Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 55%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors.

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Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 55%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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“…According to their calculations, the size of the percolation cluster approaches infinity when all the sites separated by an energy barrier less than 0.5 eV are connected. 30 This activation energy of about 0.5 eV for longrange diffusion of protons is close to the 0.6 eV activation energy found in bias-stress experiments on different organic semiconductors. 11 This strongly suggests that proton motion in the SiO 2 determines the dynamics of the bias-stress effect.…”

Section: Proton Migration Mechanism For the Bias-stress Effectmentioning

confidence: 55%

“…The mobility of protons in amorphous SiO 2 has been studied by directly sensing charge displacements, indicating hopping transport of protons with hopping lengths well beyond first-neighbor oxygen distances. 29 In a theoretical study, Godet and Pasquarello 30 showed that protons usually bind to bridging O atoms in Si-O rings that become threefold coordinated with O-H + bond lengths of about 1 Å. The hopping mechanism involves a transient complex, in which a proton is shared by two O atoms of different rings.…”

Section: Proton Migration Mechanism For the Bias-stress Effectmentioning

confidence: 99%

Proton migration mechanism for operational instabilities in organic field-effect transistors

et al. 2010

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. (2010). Proton migration mechanism for operational instabilities in organic field-effect transistors. Physical Review B, 82(7), 075322-1/11. [075322]. DOI: 10.1103/PhysRevB.82.075322 DOI:10.1103/PhysRevB.82.075322 Document status and date:Published: 01/01/2010 Document Version:Publisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric both for a constant as well as for a dynamic gate bias. We associate the instabilities with a reversible reaction in the organic semiconductor in which holes are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we show how a shorter period of application of a gate bias leads to a faster backward shift of the threshold voltage when the gate bias is removed. The proposed mechanism is consistent with the observed acceleration of the bias-stress effect with increasing humidity, increasing temperature, and increasing energy of the highest molecular orbital of the org...

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“…Reversible motion in SiO 2 is the basis of memory effects in Si/SiO 2 /Si devices, where protons shuttle through the SiO 2 layer from one Si layer to the other on a time scale of seconds to thousands of seconds, [47,48] i.e., on a similar time scale as the bias-stress effect in OFETs. DFT calculations predict an activation energy for proton diffusion in SiO 2 of E d = 0.5 eV, [49] which is close to the E a ≈ 0.6 eV activation energy for the bias-stress effect measured in OFETs with different organic semiconductors. [30] Based on these considerations, the following mechanism for the bias-stress effect in p-type OFETs is proposed: [50,51] 1.…”

Section: Potentiometry At the Sio 2 Surfacementioning

confidence: 78%

Operational Stability of Organic Field‐Effect Transistors

et al. 2012

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Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization. However, serious problems remain with the stability of OFETs under operation. The causes for this have remained elusive for many years. Surface potentiometry together with theoretical modeling provide new insights into the mechanisms limiting the operational stability. These indicate that redox reactions involving water are involved in an exchange of mobile charges in the semiconductor with protons in the gate dielectric. This mechanism elucidates the established key role of water and leads in a natural way to a universal "stress function", describing the stretched exponential-like time dependence ubiquitously observed. Further study is needed to determine the generality of the mechanism and the role of other mechanisms.

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Proton Diffusion Mechanism in AmorphousSiO2

Cited by 66 publications

References 31 publications

Proton migration mechanism for the instability of organic field-effect transistors

Proton migration mechanism for the instability of organic field-effect transistors

Proton migration mechanism for operational instabilities in organic field-effect transistors

Operational Stability of Organic Field‐Effect Transistors

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