Proton damage effects on p-channel CCDs

Hopkinson, G.R.

doi:10.1109/23.819155

Cited by 47 publications

(41 citation statements)

References 14 publications

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“…Evolution of dark durrent in proton irradiated CCD (device 4) compared to 60 Co irradiated CCD (device 9) constants are poorly constrained, the values agree quite well with the values from the two term fit to the proton-irradiated data.…”

Section: Results Of 60 Co Irradiationsupporting

confidence: 67%

“…The LBNL p-channel CCDs are fabricated on high-resistivity n-type silicon with boron implanted channels. In the p-channel CCDs, divacancy states are expected to be the dominant hole trap [7]- [9]. It has been predicted that divacancy formation in p-channel CCDs is less favorable than phosphorus-vacancy traps in n-channel CCDs [8], and prior studies have shown improved performance after radiation exposure [7], [10], [11].…”

Section: Ccd Requirementsmentioning

confidence: 99%

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Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

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Section: Results Of 60 Co Irradiationsupporting

confidence: 67%

Section: Ccd Requirementsmentioning

confidence: 99%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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“…As pointed out by Spratt et al [5] and Hopkinson [6], the dominant hole trap expected after proton irradiation of a p-channel CCD is the divacancy. Divacancy formation is considered to be less favorable in a p-channel CCD compared to P-V formation in an n-channel CCD.…”

Section: Radiation Damagementioning

confidence: 99%

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Bebek

Groom

Holland

et al. 2002

IEEE Trans. Nucl. Sci.

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Abstract-P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1 × 10 11 protons/cm 2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.

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“…Proton displacement damage effects on CCDs have also been extensively investigated. [6][7][8][9][10] Histograms of dark current in p-buried channel CCDs irradiated by 10 MeV protons are available in the literature. 6 Dark signal spikes in EEV three phase CCDs irradiated by 40 MeV protons are investigated.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10] Histograms of dark current in p-buried channel CCDs irradiated by 10 MeV protons are available in the literature. 6 Dark signal spikes in EEV three phase CCDs irradiated by 40 MeV protons are investigated. 7 Mean degradation of dark current and DSNU induced by proton irradiation from 17 to 100 MeV are analyzed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

et al. 2014

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The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed to 1MeV neutron-equivalent fluences of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal non-uniformity (DSNU), and dark signal spikes (hot pixels) versus neutron fluence are investigated. The degradation mechanisms of the dark signal in CCDs are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from the CCDs irradiated by neutrons are presented to investigate the generation of dark signal spike. The 1D and 2D figures which show the output signal voltage of pixels in dark images irradiated by different neutron beam fluences, are presented to compare the degradation of KD, DSNU, and dark signal spike.

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Proton damage effects on p-channel CCDs

Cited by 47 publications

References 14 publications

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

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