Proton damage effects in high performance P-channel CCDs

Spratt, J.P.; Conger, C.; Bredthauer, Richard; Byers, W.; Groulx, R.; Leadon, R. E.; Clark, Harry

doi:10.1109/tns.2006.874620

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…The LBNL p-channel CCDs are fabricated on high-resistivity n-type silicon with boron implanted channels. In the p-channel CCDs, divacancy states are expected to be the dominant hole trap [7]- [9]. It has been predicted that divacancy formation in p-channel CCDs is less favorable than phosphorus-vacancy traps in n-channel CCDs [8], and prior studies have shown improved performance after radiation exposure [7], [10], [11].…”

Section: Ccd Requirementsmentioning

confidence: 99%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

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Section: Ccd Requirementsmentioning

confidence: 99%

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Modeling of paths and energy losses of high-energy ions in single-layered and multilayered materials

Тишкевич

Грабчиков

Grabchikova

et al. 2020

IOP Conf. Ser.: Mater. Sci. Eng.

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Modern electronic systems and equipment used in aerospace and nuclear technology, as well as many scientific and medical devices, are used under the influence of a wide range of ionizing radiation (electrons, protons, heavy charged particles etc.). Protons or heavy charged particles exposure can lead to failures in the operation of spacecrafts electronic devices, which is associated with the radiation effects occurrence in an integrated circuits. One of the most effective ways to solve this problem is protection by radiation shields. Linear and mass paths of protons and Ar+ ions in Al, Al2O3, Bi, and W77, 7Cu22, 3 composite shields were calculated using a SRIM software package. It is shown that the protection efficiency against high-energy ions by materials with large atomic charge values (Z) is higher from the position of linear ranges of particles, and lower from the position of mass ranges than materials with low Z values. The dependence of the threshold energy on the serial number of particles for Al, Bi and W77, 7Cu22, 3 composite shields is determined. The effect of the sequence in the arrangement and layer thicknesses in the Bi/Al/Al2O3 multilayered structures on the protection efficiency against high-energy ions was studied.

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Simulation of space-based observed star map in space radiation environment

Zhu

Niu

et al. 2016

2016 Progress in Electromagnetic Research Symposium (PIERS)

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Proton damage effects in high performance P-channel CCDs

Cited by 4 publications

References 13 publications

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Modeling of paths and energy losses of high-energy ions in single-layered and multilayered materials

Simulation of space-based observed star map in space radiation environment

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