Proton-assisted growth of ultra-flat graphene films

Yuan, Guowen; Lin, Dongjing; Wang, Yong; Huang, Xianlei; Chen, Wang; Xie, Xuedong; Zong, Junyu; Yuan, Qian-Qian; Zheng, Hongxing; Wang, Di; Xu, Jie; Li, Shaochun; Zhang, Yi; Sun, Junqiang; Xi, Xiaoxiang; Gao, Libo

doi:10.1038/s41586-019-1870-3

Cited by 130 publications

(113 citation statements)

References 41 publications

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“…Another method with prospect for growth high quality graphene films is seamlessly stitching distributed graphene grains by epitaxial growth of graphene with the same orientation on designed substrates. Currently, various techniques for CVD growth of large-area single-crystal graphene films [109][110][111][112] and wrinkle-free, ultra-flat graphene [113] have been proposed. Even though, synthesis of graphene on surfaces without any defects or imperfections still remains a challenge.…”

Section: Discussionmentioning

confidence: 99%

Oxidative Originators of Graphene Barrier Coating Grown on Surfaces

2020

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Graphene coating has been proposed to be a promising oxidation barrier for metals because of its chemical inertia and physical impermeability. Nevertheless, chemical vapor deposition (CVD)‐grown graphene on metal surfaces results in many structural defects and growth imperfections, which would serve as oxidative originators and favor a substantial galvanic corrosion at such interfaces in the long term. On this basis, oxidative originators including graphene structural defects and CVD growth imperfections of graphene on copper have been reviewed from the perspective of CVD growth of graphene. The associated oxidation processes and long‐term corrosion mechanisms as a protective coating for Cu are discussed. Finally, the remaining challenges and potential improvement of graphene and graphene‐like materials grown on surfaces as a barrier coating are outlooked. We aim to providing comprehensive knowledge about the relationship between various graphene defects/growth imperfections and the oxidation/corrosion mechanisms as a protective coating, seeking a roadmap to promote the development of cheap, powerful and effective barrier technologies based on such ultrathin two‐dimensional materials.

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Section: Discussionmentioning

confidence: 99%

Oxidative Originators of Graphene Barrier Coating Grown on Surfaces

2020

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“…[ 94 ] Multiple nuclei always result in domain boundaries, wrinkles, and defects that severely degrade quality, and they limit homogeneity. [ 95 ] Because the defects can be healed by annealing in carbon feedstock, single‐crystal graphene can be realized by using delicately designed substrates and optimizing the growth conditions. Wrinkles in graphene are frequently generated during growth owing to the strong coupling with the surface and/or during the cooling stage.…”

Section: Epitaxial Growth Of Me2dmsmentioning

confidence: 99%

“…A proton‐assisted CVD method was developed based on proton penetration and recombination to form hydrogen at the interface between graphene and the substrate that can efficiently remove wrinkles. [ 95 ] In addition, the CVD growth of graphene always generates amorphous carbon on the surface, seriously degrading its properties. The Liu group at Peking University devoted tremendous efforts to remove these surface contaminants using the designed architecture of the Cu substrate, a cold‐wall CVD system, and an activated carbon‐coated lint roller.…”

Section: Epitaxial Growth Of Me2dmsmentioning

confidence: 99%

Epitaxial Growth of Main Group Monoelemental 2D Materials

Zhou

et al. 2020

Adv Funct Materials

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Since the discovery of graphene, 2D materials have attracted significant attention for their unique properties. Monoelemental 2D materials (ME2DMs) are of particular interest because of their superiority in synthetic exploration, excellent mobility, and wide range of band gaps over other 2D compounds. Substantial efforts are devoted to fabricate high‐quality materials through various substrates and reveal the growth mechanism at the atomic scale. In this review, the recent progress in the preparation of these ME2DMs is explored, the roles of different substrates is highlighted, and the challenges of and perspectives on their heterostructures is discussed.

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“…One of the most amazing properties of graphene is Quantum Hall Effect (QHE), which is usually observed in magneto-transport measurements at low temperatures [ 145 ]. Such studies have shown that most flat graphene films grown by proton-assisted chemical vapor deposition (CVD) may exhibit QHE even at room temperatures [ 145 ]. The flatness of the CVD graphene was a crucial component in this discovery.…”

Section: Future Challenges For Raman Spectroscopy To Study Effectsmentioning

confidence: 99%

Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC

et al. 2020

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Graphene distinctive electronic and optical properties have sparked intense interest throughout the scientific community bringing innovation and progress to many sectors of academia and industry. Graphene manufacturing has rapidly evolved since its discovery in 2004. The diverse growth methods of graphene have many comparative advantages in terms of size, shape, quality and cost. Specifically, epitaxial graphene is thermally grown on a silicon carbide (SiC) substrate. This type of graphene is unique due to its coexistence with the SiC underneath which makes the process of transferring graphene layers for devices manufacturing simple and robust. Raman analysis is a sensitive technique extensively used to explore nanocarbon material properties. Indeed, this method has been widely used in graphene studies in fundamental research and application fields. We review the principal Raman scattering processes in SiC substrate and demonstrate epitaxial graphene growth. We have identified the Raman bands signature of graphene for different layers number. The method could be readily adopted to characterize structural and exceptional electrical properties for various epitaxial graphene systems. Particularly, the variation of the charge carrier concentration in epitaxial graphene of different shapes and layers number have been precisely imaged. By comparing the intensity ratio of 2D line and G line—“I2D/IG”—the density of charge across the graphene layers could be monitored. The obtained results were compared to previous electrical measurements. The substrate longitudinal optical phonon coupling “LOOPC” modes have also been examined for several epitaxial graphene layers. The LOOPC of the SiC substrate shows a precise map of the density of charge in epitaxial graphene systems for different graphene layers number. Correlations between the density of charge and particular graphene layer shape such as bubbles have been determined. All experimental probes show a high degree of consistency and efficiency. Our combined studies have revealed novel capacitor effect in diverse epitaxial graphene system. The SiC substrate self-compensates the graphene layer charge without any external doping. We have observed a new density of charge at the graphene—substrate interface. The located capacitor effects at epitaxial graphene-substrate interfaces give rise to an unexpected mini gap in graphene band structure.

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Proton-assisted growth of ultra-flat graphene films

Cited by 130 publications

References 41 publications

Oxidative Originators of Graphene Barrier Coating Grown on Surfaces

Oxidative Originators of Graphene Barrier Coating Grown on Surfaces

Epitaxial Growth of Main Group Monoelemental 2D Materials

Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC

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