Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Mukherjee, Moumita; Mazumder, N.; Roy, S. K.

doi:10.1155/2008/275357

Cited by 18 publications

(10 citation statements)

References 13 publications

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“…But some recent theoretical study reveals the potentiality of InP-based IMPATTs as THz sources . In recent years the potentiality of wide bandgap materials (SiC, GaN) for generation of RF power at THz frequencies has been reported Mukherjee et al 2009;Panda et al 2007Panda et al , 2001; Banerjee et al 2010). Yuan et al (2001) first demonstrated the 4H-SiC based p ?…”

Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

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Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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“…For an ideal read diode, according to Gilden and Hines [21], f a is given by where J 0 is the bias current density, α′ = d α / dE , α = α n = α P , and v S = v ns = v ps . However, the computer program adopted in the present analysis [5, 6, 9], for modeling and analyzing the small-signal behavior of high-frequency IMPATT devices, is free from such simplifying assumptions as done by Gilden and Hines [21]. In the present generalized simulation technique [9], α n ≠ α P , v ns ≠ v ps , and the value of f a at any J 0 is obtained from the admittance plot of the diode corresponds to the frequency at which B changes its sign from negative to positive.…”

Section: Computer Simulation Methodologiesmentioning

confidence: 99%

Optically modulated III–V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency

Mukherjee

Roy

2009

Int. J. Microw. Wireless Technol.

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Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III–V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0% are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in top-mounted IMPATT, photo-generated leakage current dominated by hole in flip-chip IMPATT has more pronounced effect on the GaN-based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the wide band gap semiconductor has been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high-frequency operation. These results are useful for practical realization of optically controlled GaN-based high-power IMPATTs for application in MM-wave communication systems.

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“…To achieve this the author developed a simulation program using an algorithmic flowchart based on different wellknown research works [4][5][6][7][8][9][12][13][14][15][16][17] as well as properly preserving all boundary conditions and properties of the device with adequate range of operation using MATLAB software. Here the author is able to set the ranges of various parameters independently according to requirement of the program, which in turn enhances the calibration of the program.…”

Section: Theory and Simulation Techniquementioning

confidence: 99%

“…Thus the method of optical tuning by illuminating the junction of the diode is one of the latest state-of-the-art technologies. Different theoretical and a few experimental studies in the last few years [4][5][6][7][8][9][10][11] showed the influence of optical control over normal electronic control of the DDR IMPATT device, and its application in optoelectronic integrated circuits and phased array antennas for space-based communication, imaging and advanced radars etc makes the methodology more interesting. The optical radiation consists of photons (hν) with higher value of energy when incident through optical window at the junction and interacting with semiconductor material (E g ), then it is absorbed (as hν > E g ) at either edges of p + or n + side of DDR IMPATT structure.…”

Section: Introductionmentioning

confidence: 99%

Effect of optical illumination on DDR IMPATT diode at 36 GHz

Banerjee¹,

Mitra

2017

J. Semicond.

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A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted (TM) and flip chip (FC) configuration, it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.

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Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Cited by 18 publications

References 13 publications

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Optically modulated III–V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency

Effect of optical illumination on DDR IMPATT diode at 36 GHz

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