Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures

Klochko, N. P.; Myagchenko, Y.O.; Melnychuk, E. E.; Kopach, V. R.; Klepikova, E. S.; Lyubov, V. N.; Khrypunov, G. S.; Kopach, A. V.

doi:10.1134/s1063782613080101

Cited by 9 publications

(4 citation statements)

References 12 publications

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“…The broad spectrum of ZnO morphological peculiarities is due to different kinetic parameters of different growth planes [3]. The important factor that allows to effectively control the shape and the size of ZnO arrays is the temperature of the electrolyte, since it determines the intensity of electrochemical processes, reagent diffusion rate and desorption rate of reaction products from the surface of grown ZnO [34]. The thickness of zinc oxide layer was increased with deposition duration.…”

Section: Resultsmentioning

confidence: 99%

Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon–Silicon Structures

Olenych¹

2016

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Zinc oxide nanostructures have been grown by electrochemical deposition on porous silicon-silicon substrate. The effect of electrolyte temperature on the morphology of grown ZnO arrays was observed. Temperature dependencies of the electrical conductivity for the structures based on porous silicon were investigated in 80-325 K range. The results are analyzed within the model of disordered semiconductors and the activation energy of charge transport is determined. It is shown that ZnO layers cause the decrease of the electrical conductivity activation energy in 140-250 К temperature range. Electric conductivity was also shown to be dependent on the morphology of ZnO arrays. Based on the spectra of thermally stimulated depolarization current, the localized electron states in the experimental samples are found. The trap levels are distributed quasi-continuously on the activation energy and exist in the ranges of 0.2-0.3, 0.4-0.45, 0.5-0.55 and 0.6-0.65 eV. ZnO nanocrystals grown on porous silicon substrates modify density of states in different energy ranges.

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Section: Resultsmentioning

confidence: 99%

Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon–Silicon Structures

Olenych¹

2016

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“…Crystalline structure and phase structure of films were investigated on a x-ray diffractometer the DRON-4M in monochromatic Co-Kα radiation. Identification of phases in models was carried out on the basis of comparison of set of the interplanar distances calculated by Woolf-Bragg's formula [9], with the available sets of interplanar distances for tin oxides from the help ASTM cards. Roughing-out of the diffraction peaks was carried out by means of the developed computer program.…”

Section: Technique Of Carrying Out Experimentsmentioning

confidence: 99%

“…Spectral dependences of the coefficients oftransmittances and reflection of films of sulfide of cadmium investigated by method of a two-channel optical spectroscopy by means of a spectrophotometer SPh-2000, equipped with the SPhO prefix-2000 for measurement of reflecting and diffuse reflections. Optical width of the forbidden region of Eg layers of CdS defined similarly described in [9], by means of extrapolation on an axis of energies of the line section, dependence [-ln(T)hν] 2 from hν.…”

Section: Technique Of Carrying Out Experimentsmentioning

confidence: 99%

Structure and Properties of the Cadmium Sulfide Films Received by Magnetron Dispersion Method

Зайцев¹,

Kirichenko²,

Migushchenko³

et al. 2017

J. Nano- Electron. Phys.

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For the purpose of creation of the economic, suitable for large-scale application technology of formation of a layer of wide-scale "window", for thin-film photo-electric converters on the basis of sulfide and telluride of cadmium the pilot studies of temperature effect of a deposition of the films of sulfide of cadmium received by method of magnetron dispersion on a direct current on their optical properties and crystalline structure were conducted. By method of a two-channel optical spectroscopy it is established that a deposition of films of sulfide of cadmium at a temperature of 160 °C allows to form layers with a width of forbidden region of 1,41 eV that approaches value, characteristic of monocrystals, and the density of the photon flux passing through a cadmium sulfide layer in a spectral interval of a photosensitivity of telluride of cadmium at the level of 37,0 Wnmcm 2 .

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“…Для получения таких пленок используется вакуумное осаждение: термическое, электроннолучевое, ионно-плазменное, магнетронное, импульсно-лазерное, химическое парофазное [25][26][27][28][29]. У каждого из перечисленных методов имеются как достоинства, так и недостатки.…”

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Morphological, optical and photoluminescent properties of a thin ZnO film on the Al2O3 substrate

Chumakov

Мухуров

Denisiuk

et al. 2018

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

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Аннотация. Тонкие прозрачные проводящие пленки оксида цинка представляют интерес для применения в различных областях науки и техники, в том числе в антиобледенительных системах стекол в самолетах, в покрытиях, уменьшающих статический электрический заряд на панелях измерительных приборов, в электрических контактах к жидким кристаллам, электрохромных и электролюминесцентных индикаторах для дисплеев, разработках высокоэффективных солнечных элементов. Тонкие пленки оксида цинка на подложках из анодного оксида алюминия сформированы на пористой стороне и на барьерном слое γ-оксида алюминия при высокочастотном импульсно-периодическом лазерном осаждении в вакууме. Методом атомно-силовой микроскопии изучены морфологии полученных пленок и отмечены их различия в зависимости от стороны подложки. Экспериментально исследованы оптические свойства пленок в ближней ИК-области, а также особенности их фотолюминесцентных характеристик. Конструкции подложка Al 2 O 3-пленка ZnO в качестве чувствительного слоя могут быть применены для разработки сенсоров и тандемных солнечных элементов. Ключевые слова: высокочастотное импульсное лазерное осаждение, тонкие пленки, атомно-силовая микроскопия, оптические и морфологические свойства, фотолюминесцентные характеристики Для цитирования. Морфологические, оптические и фотолюминесцентные свойства тонких пленок ZnO на подложке Al 2 O 3 / А. Н. Чумаков [и др.] // Вес. Нац. акад. навук Беларусi.

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Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures

Cited by 9 publications

References 12 publications

Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon–Silicon Structures

Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon–Silicon Structures

Structure and Properties of the Cadmium Sulfide Films Received by Magnetron Dispersion Method

Morphological, optical and photoluminescent properties of a thin ZnO film on the Al2O3 substrate

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