Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties

Viennois, R.; Taliercio, Thierry; Potin, Valérie; Errebbahi, A.; Gil, Bernard; Charar, S.; Haidoux, A.; Tédenac, J. C.

doi:10.1016/s0921-5107(00)00699-1

Cited by 53 publications

(70 citation statements)

References 6 publications

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“…Viennois et al 16 performed the first Raman spectroscopy study on powder samples of ZnGeN 2 , synthesized by a similar approach as used by Maunaye and Lang.…”

Section: Kikkawa and Morisakamentioning

confidence: 99%

Quasiparticle band structure of Zn-IV-N2compounds

2011

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“…Viennois et al 16 performed the first Raman spectroscopy study on powder samples of ZnGeN 2 , synthesized by a similar approach as used by Maunaye and Lang.…”

Section: Kikkawa and Morisakamentioning

confidence: 99%

Quasiparticle band structure of Zn-IV-N2compounds

2011

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“…For ZnGeN 2 there are two experimental sets of Raman data, one on polycrystalline powder samples [15], and one on micronsize diameter single crystal needles [16]. These spectra are quite different.…”

Section: Phononsmentioning

confidence: 99%

“…Comparison of powder Raman spectrum from Viennois et al [15] with phonon density of states for ZnGeN 2 . The red-dashed curve is the phonon density of states but with ω replaced by 2ω to mimic the second harmonic spectrum.…”

Section: Figurementioning

confidence: 99%

“…Among these, ZnGeN 2 and ZnSiN 2 and alloys of ZnSi x Ge 1−x N 2 were grown in thin film form (mostly on sapphire substrates) by a few different approaches, ranging from Cl based vapor growth [3], metalorganic chemical vapor deposition (MOCVD) [8,9], remote plasma MOCVD [10,11,12], RF-sputtering [13] at high pressure by Endo et al [2] and polycrystalline as well as small single crystals were grown by Du et al [14]. Raman spectra were measured by Viennois et al [15] on polycrystalline powders and on small single crystal needles by Peshek et al [16] Optical absorption [17], index of refraction [18], infrared reflectivity [19], magnetic properties upon Mn doping [20], and fabrication of transistors on SiC [21] were investigated for the Zn(Si,Ge)N 2 films obtained produced by Zhu et al [8]. Band structure calculations at the local density approximation (LDA) level were carried out by Limpijumnong et al [22] Misaki et al [23], Shaposhnikov et al [24] and Paudel [25] for a number of these materials but leave considerable uncertainty on the band gaps because of the shortcomings of the LDA.…”

Section: Introductionmentioning

confidence: 99%

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Electronic and lattice dynamical properties of II‐IV‐N₂ semiconductors

Punya

Paudel

Lambrecht

2011

Phys. Status Solidi C

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The II‐IV‐N2 semiconductors constitute a family of heterovalent ternary semiconductors with properties closely related to those of the III‐Nitrides. We here focus on Zn‐IV‐N2 semiconductors with the group IV‐element Si, Ge and Sn. We present results on their electronic band structures obtained with the quasiparticle self‐consistent GW method and the full‐potential linearized muffin‐tin orbital method. The latter is also used to calculate the energies of formation of these compounds from the constituent elements. The lattice dynamical properties were presented earlier in a series of papers and the main properties are briefly reviewed here. We emphasize the trends in the family of materials compared to those of the III‐N and discuss the experimental data for the phonons. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The unpolarized spectrum showed no well-resolved Raman peaks. 9 Subsequently, Raman spectra were measured for hexagonally faceted single crystals of diameters of a few microns and lengths of tens of microns along the c axis by Peshek et al 10 Using this geometry and exploiting Raman polarization dependent selection rules, it was possible to measure the a 1 and b 2 TO modes. In addition, there was clear correlation between some features in the measured spectra with peaks in the calculated phonon density of states.…”

Section: Introductionmentioning

confidence: 99%

Raman study of the vibrational modes in ZnGeN2 (0001)

Blanton

Hagemann

et al. 2017

Journal of Applied Physics

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A Raman spectroscopy study was carried out for ZnGeN2 with direction of propagation along the (0001) crystallographic direction on hexagonal single crystal platelets obtained by reaction of gaseous ammonia with a Zn-Ge-Sn liquid alloy at 758 • C. The sample geometry allowed measurement of the a2 and a1 Raman modes. First-principles calculations were carried out of the spectra. Measurements with crossed polarizers yielded spectra that agreed well with first-principles calculations of the a2 modes. Measurements with parallel polarizers should in principle provide the a1L modes. However, for most of the Raman modes, the LO-TO splitting was calculated to be very small, and for the few modes which were predicted to have larger LO-TO splittings, the LO mode was not observed. This absence is tentatively explained in terms of overdamped LO-plasmon coupling. LO-TO mode crossing was identified by comparing the calculated eigenvectors and intensities of individual modes. Some features in the experimental spectra were identified as arising from critical points in the phonon density of states and are indicative of the degree of disorder on the cation lattice.

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Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties

Cited by 53 publications

References 6 publications

Quasiparticle band structure of Zn-IV-N2compounds

Quasiparticle band structure of Zn-IV-N2compounds

Electronic and lattice dynamical properties of II‐IV‐N₂ semiconductors

Raman study of the vibrational modes in ZnGeN2 (0001)

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Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties

Cited by 53 publications

References 6 publications

Quasiparticle band structure of Zn-IV-N2compounds

Quasiparticle band structure of Zn-IV-N2compounds

Electronic and lattice dynamical properties of II‐IV‐N2 semiconductors

Raman study of the vibrational modes in ZnGeN2 (0001)

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Product

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Electronic and lattice dynamical properties of II‐IV‐N₂ semiconductors