Propriétés électroniques et électrogalvaniques du séléniure d'argent α-domaine d'existence

Bonnecaze, Gaston; Lichanot, Albert; Gromb, Simon

doi:10.1016/0022-3697(80)90096-7

Cited by 13 publications

(4 citation statements)

References 27 publications

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“…4, we show the dependence of on 1/T [4,14], the slope of which enables us to calculate . The difference between the beginning of this straight line enables us to calculate the band gap temperature coefficient β 1 .…”

Section: Calculation Methodsmentioning

confidence: 99%

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Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag2Te

et al. 2012

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The energy gap and its temperature coefficient are calculated depending on the concentration of defects in silver telluride with a Te and Ag excess. On the basis of the obtained data, the correlation between the charge carrier energy spectrum and the silver telluride defectness is analyzed. It is established that the correlation is a reflection of more general fundamental relations between the energy structure and the defect concentration in Ag 2 Te caused by ions and vacancies of silver atoms in the sublattice.

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Section: Calculation Methodsmentioning

confidence: 99%

“…The value of accord ing to the equation established for α Ag 2 Se [14] is (4) where θ corresponds to stoichiometric Ag 2 Se, while μ n is given by the expression [14]: (5) where γ is the activation coefficient calculated by the Rosenberg method [15]: …”

Section: Calculation Methodsmentioning

confidence: 99%

Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag2Te

et al. 2012

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“…The steady state value of E is measured by means of currentless cell pressed against the sample. Ag2• compositions (i.e., 8 values) were determined for each E value by the coulometric titration curves [9,10]. The measuring cell has been placed in the furnace at the temperature measured with the accuracy to + 1 K. The cell has been kept in vacuum under the residual pressure 10 .5 Pa. Silver chalcogenides were synthesized from high purity elements by sintering them in Pyrex tubes under the residual pressure of 10 -6 Pa at a temperature of 500 ~ for 100 hours.…”

Section: Methodsmentioning

confidence: 99%

“…Experimental data analysis [6,[9][10][11] has shown that there are no singular points of the physical properties in the composition dependencies for these compounds with the exception of composition dependencies of the chemical potential (the coulometric titration curves) [9]. There is quantitative coincidence of the salient points of the experimental dependencies with the inflection points of the titration curves.…”

Section: Ag2+~e/vacuummentioning

confidence: 96%

Electrical studies of surface reconstruction resulting from chalcogen evaporation at the Ag2±δX/Vacuum interface (X=S, Se)X/Vacuum interface (X=S, Se)

Nadolsky¹,

Krzhivitskaya

Matkina³

et al. 2000

Ionics

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Abstract.We have investigated the dissociation rates of nonstoichiometric semiconductors Ag2+_sX (X = S, Se) to the vacuum by means of solid-state electrochemical technique. The values of chalcogen fluxes from the sample's surface were measured versus compound's composition and temperature. There has been obtained experimental evidence of the surface reconstruction of silver chalcogenides when the exact phase composition 8~r.(T) is reached. This critical value 5or. correlates with the order-disorder transition in the silver sublattice for the Ag2• interface.

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Composition dependent electronic conductivities and hall coefficients of mixed ionic‐electronic conductors. Part II: The high‐temperature phase of silver selenide

Sohège

Funke

1989

Ber Bunsenges Phys Chem

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The electronic conductivity, σe, and the Hall coefficient, RH, of the high‐temperature phase of silver selenide, β‐Ag2+δSe, are experimentally determined at temperatures T between 170° and 300° and at values of σ covering the entire stability range. The change of composition is achieved and monitored by in situ coulometric titration. The electronic transport data yield the following results. The conduction band is harmonic, whereas the valence band is anharmonic. Mobility and relaxation time of conduction‐band electrons vary with temperature as T−1 and with the electronic energy as ϵ−1/2. This is the behaviour normally assumed to be valid, if the relaxation is due to the scattering of electrons by acoustic phonons.

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Propriétés électroniques et électrogalvaniques du séléniure d'argent α-domaine d'existence

Cited by 13 publications

References 27 publications

Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag2Te

Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag2Te

Electrical studies of surface reconstruction resulting from chalcogen evaporation at the Ag2±δX/Vacuum interface (X=S, Se)X/Vacuum interface (X=S, Se)

Composition dependent electronic conductivities and hall coefficients of mixed ionic‐electronic conductors. Part II: The high‐temperature phase of silver selenide

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