Propriétés électriques des structures MIS sur InP passivé par un oxyde

Joseph, J.; Mahdjoub, A.; Robach, Y.

doi:10.1051/rphysap:01989002402018900

Cited by 8 publications

(14 citation statements)

References 6 publications

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“…29 According to the adopted experimental conditions, such as electrolyte composition, pH, current density, or time, very different oxide layers are grown. [30][31][32][33] In the present paper, the anodic treatment of the InP surfaces has been performed in a borate buffered solution at pH 9 leading to the growth of an "InPO 4 -like" layer with good chemical and electrical properties. 29,34,35 By varying the time and/or the current density, the thickness of the resulting oxide layer can be controlled, which is of importance in our study since it determines the distance between the absorber material and the semiconductor surface.…”

Section: Passivation Of the Inp Surfacesmentioning

confidence: 99%

Förster resonance energy transfer between individual semiconductor nanocrystals and an InP film

et al. 2016

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Abstract. The modification of the radiative decay of a single emitter in close vicinity to a dielectric interface is investigated by studying the photoluminescence (PL) decay dynamics of colloidal semiconductor nanocrystals (NCs) deposited on semiconductor surfaces. The PL decay lifetimes of single CdSe/CdS NCs spin-coated on InP surfaces passivated with thin oxide layers are measured. Electrochemical passivation of the InP surfaces with oxide layers of different thicknesses enables to study the influence of the distance between the semiconductor surface and the NC on the lifetime. A shortening of the PL decay lifetimes of the NCs with respect to their lifetimes on glass strongly suggests the opening of recombination channels for the photogenerated exciton, which we attribute to energy transfer between the NC and the semiconductor. We also experimentally show the influence of the orientation of the NC with respect to the semiconductor surface on the coupling.

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Section: Passivation Of the Inp Surfacesmentioning

confidence: 99%

Förster resonance energy transfer between individual semiconductor nanocrystals and an InP film

et al. 2016

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“…The correlation factor, A, is taken equal to 0.65 (7). d ox values deduced from this simulation are given in table 1.…”

Section: Ecs Transactions 19 (3) 273-281 (2009)mentioning

confidence: 99%

Morphology, Composition and Electrical properties of Thin Anodic Oxides on InP

Simon

Decorse

Santinacci³

et al. 2009

ECS Trans.

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Depending on the applied electrochemical parameters, various anodic films can be grown onto InP in aqueous media. In borate buffer at pH = 9, the formation of homogeneous and thin InPO4-like films occurred when anodic treatment is performed with a low current density, while with higher imposed current configuration porous and thicker layers are grown. In this work, AFM measurements coupled with XPS analyses and capacitance-voltage investigations have been used to study the relationship between morphology, composition and electrical properties of different anodic oxide films performed on InP surface, with current densities ranging from 1 mA.cm-2 to 100 mA.cm-2.

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“…Thermal annealing is generally used in the technological process to cure the interface defects caused by the insulator deposit. An annealing at 350 • C under forming gas (N 2 \H 2 ) for two hours is recommended [9]. The PL spectra reported on the two samples having undergone the same annealing are presented in Figure 2.…”

Section: Photoluminescencementioning

confidence: 99%

“…This positive charge is caused by the oxygen deficiency generally reported for this type of deposits. An annealing in oxygen atmosphere is generally necessary to improve the quality of Al 2 O 3 deposited in this way [9]. After annealing in oxygen at 300 °C for 30 min, Al 2 O 3 loses its positive charge while approaching the stoichiometry which once reached modifies curving the energy band at the interface.…”

Section: Photoluminescencementioning

confidence: 99%

“…The electrochemical approach used in several previous works [5][6][7] allows a better control of the treatment and a broad range of oxidation parameters which affect the properties of the obtained oxide. However, in recent years, there have been many reports on the potential passivating properties of anodic oxide for the interface of the MIS-InP structures [8,9]. The characterization of the interface of the MIS structures is generally based on measurements of high frequency capacitance (Terman analysis) or on quasi-static mode (Berglund technique).…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation

Mahdjoub¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of Al2O3 on InP. Polyphosphate thin films of thickness 100-150Å were used to passivate the interface InP\Insulator. Photoluminescence spectra are reported at low temperature at various stages of the realization process of the MIS-InP structure. Photoluminescence topography at ambient temperature made it possible to characterize the surface state after each technological stage. The interface degradation under the effect of repeated annealing is insignificant up to temperatures of 350 • C. Radiative major defects detected by photoluminescence spectrum with energy 0.95-1.15 eV attributed to the complexes impurities of phosphorus vacancies are substantially reduced by the presence of anodic oxide.

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Propriétés électriques des structures MIS sur InP passivé par un oxyde

Cited by 8 publications

References 6 publications

Förster resonance energy transfer between individual semiconductor nanocrystals and an InP film

Förster resonance energy transfer between individual semiconductor nanocrystals and an InP film

Morphology, Composition and Electrical properties of Thin Anodic Oxides on InP

Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation

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