Propriétés de transport de l'antimoniure d'indium à densité de porteurs libres contrôlée par un niveau à relaxation de réseau

Kadri, A.; Baj, M.; Zitouni, K.; Aulombard, Roger; Bousquet, C.; Robert, Jean-Louis; Konczewicz, Leszek

doi:10.1051/rphysap:01984001903021500

Cited by 2 publications

(1 citation statement)

References 12 publications

(21 reference statements)

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“…Study of this influence is a problem of prime importance [1,2]. In this field of investigation the attainments are little yet, especially with respect to structures and devices based on A3 B5 semiconductors since the deep levels have rather complex character there and are still poorly understood. In InSb variety of deep levels are observed and investigated [3][4][5]. The purpose of our work is to investigate what sort of influence on the spacecharge layer characteristics in InSb MIS structures they cause.…”

mentioning

confidence: 99%

Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Germanova

Valcheva

1987

Rev. Phys. Appl. (Paris)

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mentioning

confidence: 99%

Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Germanova

Valcheva

1987

Rev. Phys. Appl. (Paris)

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Calibrating Hall-Effect valvometers accounting for electromagnetic properties of the sensor and dynamic geometry of the bivalves shell

Guarini¹,

Coston‐Guarini²,

Comeau

2020

Preprint

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Hall-Effect valvometry (HES) is being used to describe bivalve valve gape variations and infer environmental perturbations in a variety of aquatic environments. Surprisingly, the published calibrations in ecological literature ignore both the electromagnetic properties of HES and that the valves rotate around their hinge when they move. The high sensitivity of HES suggests these features should be accounted for explicitly to estimate measurement accurately. To address these issues, two calibration functions were developed based on the electromagnetic properties of the HES: one assumes that the HES and magnet are maintained on the same linear axis, and the second model accounts for the geometric properties of the system (i.e. variations of the angle between HES and the magnet during shell rotation). The great scallop (Pecten maximus) was used as biological model because of its large range of valve openings. HES were installed on the flat valve and magnets installed on the opposing rounded valve; 12 individuals of similar size (10 ± 1(SD) cm), were equipped and placed in controlled experimental conditions. A calibration was done for each individual once time series recordings were completed. The variability of parameter estimates was calculated with a bootstrap method. The second model (with rotatation) improves valve gape distance estimates for larger openings despite the decrease of sensor sensitivity. To infer valve gape dynamics, the reciprocal calculation of the calibration function was formalized and applied to the Hall voltage time series. Our analysis suggests that under controlled laboratory conditions, scallops are partially open most of the time (inter-valve distance equal ca. 27 mm on average, or 45 % of the average maximum opening distance). Interspersed in this continuous regime, individual scallops performed closing events at a frequency of ca. 2.5 closings per hour. A closing event is a movement that is fast enough relative to the recording frequency (10 Hz) to qualify as discrete. We find that the inversed calibration model without rotation allows negative value estimates, which indicates that this calibration function is incorrect. In contrast, the inversed calibration model with valve rotation around the hinge constrains gape distance values in their domain of definition which automatically excludes sensor readings that produce negative values from estimated gape time series.

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Propriétés de transport de l'antimoniure d'indium à densité de porteurs libres contrôlée par un niveau à relaxation de réseau

Cited by 2 publications

References 12 publications

Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Calibrating Hall-Effect valvometers accounting for electromagnetic properties of the sensor and dynamic geometry of the bivalves shell

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