Proposal of spin complementary field effect transistor

Kunihashi, Yoji; Kohda, Makoto; Sanada, Haruki; Gotoh, Hideki; Sogawa, Tetsuomi; Nitta, Junsaku

doi:10.1063/1.3689753

Cited by 38 publications

(35 citation statements)

References 20 publications

(20 reference statements)

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“…3(a) and 3(b)], where β ν,eff = β ν − β ν,3 is the renormalized "linear" Dresselhaus coupling due to cubic corrections (β ν,3 ). In particular, we are able to identify a unique configuration, α 1 = β 1,eff and α 2 = −β 2,eff , which is crucial for nonballistic spin field effect transistors 4 operating with orthogonal spin quantization axes 24 and crossed persistent spin helices. 23 This paper is organized as follows.…”

Section: Introductionmentioning

confidence: 97%

Spin-orbit interaction in GaAs wells: From one to two subbands

Egues

2015

Phys. Rev. B

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We investigate the Rashba and Dresselhaus spin-orbit (SO) couplings in GaAs quantum wells in the range of well widths w allowing for a transition of the electron occupancy from one to two subbands. By performing a detailed Poisson-Schrödinger self-consistent calculation, we determine all the intra-and inter-subband Rashba (α 1 , α 2 , η) and Dresselhaus (β 1 , β 2 , Γ) coupling strengths. For relatively narrow wells with only one subband occupied, our results are consistent with the data of Koralek et al. [Nature 458 , 610 (2009)], i.e., the Rashba coupling α 1 is essentially independent of w in contrast to the decreasing linear Dresselhaus coefficient β 1 . When we widen the well so that the second subband can also be populated, we observe that α 2 decreases and α 1 increases, both almost linearly with w. Interestingly, we find that in the parameter range studied (i.e., very asymmetric wells) α 2 can attain zero and change its sign, while α 1 is always positive. In this double-occupancy regime of w's, β 1 is mostly constant and β 2 decreases with w (similarly to β 1 for the single-occupancy regime). On the other hand, the intersubband Rashba coupling strength η decreases with w while the intersubband Dresselhaus Γ remains almost constant. We also determine the persistent-spin-helix symmetry points, at which the Rashba and the renormalized (due to cubic corrections) linear Dresselhaus couplings in each subband are equal, as a function of the well width and doping asymmetry. Our results should stimulate experiments probing SO couplings in multi-subband wells.

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Section: Introductionmentioning

confidence: 97%

Spin-orbit interaction in GaAs wells: From one to two subbands

Egues

2015

Phys. Rev. B

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“…In many materials, these two kinds of SOC couple together, resulting in an anisotropy of spin splitting. Such anisotropy can lead to many interesting phenomena such as a persistent spin helix observed in GaAs low-dimensional systems [7,8], long spin relaxation times [9][10][11][12][13][14], new device proposals, and more [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2

et al. 2019

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Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic Rashba-like spin splitting along three momentum directions (3D Rashba-like spin splitting) with a helical spin polarization around the M points in the Brillouin zone of trigonal layered PtBi2. Due to its inversion asymmetry and reduced symmetry at the M point, Rashba-type as well as Dresselhaus-type SOC cooperatively yield a 3D spin splitting with αR ≈ 4.36 eV Å in PtBi2. The experimental realization of 3D Rashba-like spin splitting not only has fundamental interests but also paves the way to the future exploration of a new class of material with unprecedented functionalities for spintronics applications.

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“…The study of spin dynamics, spin dephasing, and spin diffusion is an essential part of semiconductor spintronics [1][2][3] research, which ultimately aims at utilization of the spin degree of freedom in micro-and nanoelectronic devices [4][5][6][7]. Recently, applications combining optics and semiconductor spintronics have been suggested and demonstrated experimentally: the injection of spin-polarized carriers into semiconductor lasers reduces the laser threshold [8] and can allow for rapid amplitude modulation of the laser emission [9,10].…”

Section: Introductionmentioning

confidence: 99%

Spin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

et al. 2014

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We study the optically induced spin polarization, spin dephasing, and diffusion in several high-mobility twodimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarizationresolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5%. Spin diffusion is studied by varying the distance between pump and probe beams in microspectroscopy experiments. We observe diffusion lengths above 100 μm and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance.

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Proposal of spin complementary field effect transistor

Cited by 38 publications

References 20 publications

Spin-orbit interaction in GaAs wells: From one to two subbands

Spin-orbit interaction in GaAs wells: From one to two subbands

Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2

Spin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

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