Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND

Kuk, Song‐Hyeon; Han, Jae‐Hoon; Kim, Bong Ho; Kim, J.; Kim, Sang-Hyeon

doi:10.1109/imw56887.2023.10145967

Cited by 1 publication

(2 citation statements)

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“…Moreover, the decoupled read and write terminals facilitate the independent fine-tuning of the MTJ and SHE-metal dimensions, optimizing both readability and writability [64]. In the nvSRAM cell, M7 and M8 serve as extra access transistors that are disabled to separate the SHE-MTJs from the standard 6T SRAM [20]; (b) a 1FeFET FRAM [72][73][74][75]; (c) a 8T-2MTJ nvSRAM [64]; (d) a 1T-1MTJ MRAM [76,77]; (e) a 12T-2R nvSRAM [19]; (f) a 1T-1R RRAM [21,54,78]; and (g) a 1T-1PCM PCM [22,79].…”

Section: Design Considerations For Nvm In Mcumentioning

confidence: 99%

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A Survey of Emerging Memory in a Microcontroller Unit

Qi,

Fan,

Cai

et al. 2024

Micromachines

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In the era of widespread edge computing, energy conservation modes like complete power shutdown are crucial for battery-powered devices, but they risk data loss in volatile memory. Energy autonomous systems, relying on ambient energy, face operational challenges due to power losses. Recent advancements in emerging nonvolatile memories (NVMs) like FRAM, RRAM, MRAM, and PCM offer mature solutions to sustain work progress with minimal energy overhead during outages. This paper thoroughly reviews utilizing emerging NVMs in microcontroller units (MCUs), comparing their key attributes to describe unique benefits and potential applications. Furthermore, we discuss the intricate details of NVM circuit design and NVM-driven compute-in-memory (CIM) architectures. In summary, integrating emerging NVMs into MCUs showcases promising prospects for next-generation applications such as Internet of Things and neural networks.

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Section: Design Considerations For Nvm In Mcumentioning

confidence: 99%

“…Figure 3. Bitcell structures of (a) a 6T-4C nvSRAM[20]; (b) a 1FeFET FRAM[72][73][74][75]; (c) a 8T-2MTJ nvSRAM[64]; (d) a 1T-1MTJ MRAM[76,77]; (e) a 12T-2R nvSRAM[19]; (f) a 1T-1R RRAM[21,54,78]; and (g) a 1T-1PCM PCM[22,79].…”

mentioning

confidence: 99%