Proposal for low-power atom trapping on a GaN-on-sapphire chip

liu, Aiping; Xu, Lei; Xu, Xin-Biao; Chen, Guangjie; Zhang, Pengfei; Xiang, Guo-Yong; Guo, Guang‐Can; Wang, Qin; Zou, Chang‐Ling

doi:10.1103/physreva.106.033104

Cited by 10 publications

(7 citation statements)

References 53 publications

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“…A first challenge is to keep the atoms as static as possible close to the structure, so that they can interact with the evanescent mode. While tweezers can be used to maintain the atoms at a fixed distance [17][18][19][20], it is challenging to make an array of such atoms at distances on the 100 nm range. Dipole trapping by the evanescent field of guided modes is necessary but it has remained an important roadblock.…”

Section: Introductionmentioning

confidence: 99%

Systematic design of a robust half-W1 photonic crystal waveguide for interfacing slow light and trapped cold atoms

Bouscal,

Kemiche,

Mahapatra

et al. 2024

New J. Phys.

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Novel platforms interfacing trapped cold atoms and guided light in nanoscale waveguides are a promising route to achieve a regime of strong coupling between light and atoms in single pass, with applications to quantum non-linear optics and quantum simulation. A strong challenge for the experimental development of this emerging waveguide-QED field of research is to combine facilitated optical access for atom transport, atom trapping via guided modes and robustness to inherent nanofabrication imperfections. In this endeavor, here we propose to interface Rubidium atoms with a photonic-crystal waveguide based on a large-index GaInP slab. With a specifically tailored half-W1 design, we show that a large chiral coupling to the waveguide can be obtained and guided modes can be used to form two-color dipole traps for atoms at 116~nm from the edge of the structure. This optimized device should greatly improve the level of experimental control and facilitate the atom integration.

show abstract

Section: Introductionmentioning

confidence: 99%

Systematic design of a robust half-W1 photonic crystal waveguide for interfacing slow light and trapped cold atoms

Bouscal,

Kemiche,

Mahapatra

et al. 2024

New J. Phys.

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show abstract

“…A first challenge is to keep the atoms as static as possible close to the structure, so that they can interact with the evanescent mode. While tweezers can be used to maintain the atoms at a fixed distance [15][16][17][18], it is challenging to make an array of such atoms at distances on the 100 nm range. Dipole trapping by the evanescent field of guided modes is necessary but it has remained an important roadblock.…”

Section: Introductionmentioning

confidence: 99%

Systematic design of a robust half-W1 photonic crystal waveguide for interfacing slow light and trapped cold atoms

Bouscal¹,

Kemiche²,

Mahapatra³

et al. 2023

Preprint

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Novel platforms interfacing trapped cold atoms and guided light in nanoscale waveguides are a promising route to achieve a regime of strong coupling between light and atoms in single pass, with applications to quantum non-linear optics and quantum simulation. A strong challenge for the experimental development of this emerging waveguide-QED field of research is to combine facilitated optical access for atom transport, atom trapping via guided modes and robustness to inherent nanofabrication imperfections. In this endeavor, here we propose to interface Rubidium atoms with a photonic crystal waveguide based on a large-index GaInP slab. With a specifically tailored half-W1 design, we show that a large coupling to the waveguide can be obtained and guided modes can be used to form two-color dipole traps for atoms at about 100 nm from the edge of the structure. This optimized device should greatly improve the level of experimental control and facilitate the atom integration.

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“…[26,27,37] Additionally, these demonstrations are compatible with on-chip integrated devices for cooling, transport, and trapping of cold atoms. [39][40][41] In this Letter, we report on transporting free space cooled 87 Rb atoms towards a GaN-on-sapphire chip [38] with an optical conveyor belt. [22,[42][43][44] Successful atomic transport towards the chip is made possible by our platform's full optical accessibility and careful control of atomic motion with a conveyor belt.…”

mentioning

confidence: 99%

“…In order to achieve deterministic atom trapping on integrated photonic devices, important theoretical and experimental milestones have been reached with unsuspended waveguides and microring structures. [22][23][24][25][26][27]37,38] Atoms are loaded into evanescent field of photonic structures from free space with optical tweezers and optical conveyor belts. These methods exhibit a highly precise control of atomic motion near photonic structures, including photonic crystal waveguides [22][23][24][25] and microring resonators.…”

mentioning

confidence: 99%

“…The metal holder is then connected to a CF35 vacuum cube, providing heat dissipation and stability for the chip. Here, we adopt the GaN-on-sapphire platform for the PAC following our previous theoretical proposal, [38] as the system is more stable without suspended photonic structures. In addition, both GaN and sapphire are wide-band-gap materials that are transparent to ultra-broadband wavelengths (260-1590 nm), [45,46] so our chip is compatible with lasers working in the visible and near-visible wavelengths for many al-kali and alkaline-earth atoms, allowing full optical access for cold rubidium atom cooling, trapping, transport, and detection.…”

mentioning

confidence: 99%

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Transporting Cold Atoms towards a GaN-on-Sapphire Chip via an Optical Conveyor Belt

Wang

Chen

et al. 2023

Chinese Phys. Lett.

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Trapped atoms on photonic structures inspire many novel quantum devices for quantum information processing and quantum sensing. Here, we have demonstrated a hybrid photonic-atom chip platform based on a GaN-on-sapphire chip and the transport of an ensemble of atoms from free space towards the chip with an optical conveyor belts. Due to our platform’s complete optical accessibility and careful control of atomic motion near the chip with a conveyor belt, successful atomic transport towards the chip is made possible. The maximum transport efficiency of atoms is about 50% with a transport distance of 500 µm. Our results open up a new route toward the efficient loading of cold atoms into the evanescent-field trap formed by the photonic integrated circuits, which promises strong and controllable interactions between single atoms and single photons.

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Proposal for low-power atom trapping on a GaN-on-sapphire chip

Cited by 10 publications

References 53 publications

Systematic design of a robust half-W1 photonic crystal waveguide for interfacing slow light and trapped cold atoms

Systematic design of a robust half-W1 photonic crystal waveguide for interfacing slow light and trapped cold atoms

Systematic design of a robust half-W1 photonic crystal waveguide for interfacing slow light and trapped cold atoms

Transporting Cold Atoms towards a GaN-on-Sapphire Chip via an Optical Conveyor Belt

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