Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

Abstract

the possible use of electrostrictive materials for information processing devices has been widely discussed because it could allow low-power logic operation by overcoming the fundamental limit of subthreshold swing greater than 60 mV/decade in conventional MOSFETs. However, existing proposals for electrostrictive fet applications typically adopt approaches that are entirely theoretical and simulative, thus lacking practical insights into how an electrostrictive material can be best interfaced with a channel material. Here we propose an electrostrictive FET device, involving the epitaxial oxide heterostructure as an ideal material platform for maximum strain transfer. The ON/ off switching occurs due to a stress-induced concentration change of oxygen vacancies in the memristive oxide channel layer. Based on finite-element simulations, we show that the application of a minimal gate voltage bias can induce stress in the channel layer as high as 10 8 N/m 2 owing to the epitaxial interface between the electrostrictive and memristive oxide layers. conductive AfM experiments further support the feasibility of the proposed device by demonstrating the stressinduced conductivity modulation of a perovskite oxide thin film, SrTiO 3 , that is well known to serve as the substrate for epitaxial growth of other functional oxide layers.

Data-driven methods for discovery of next-generation electrostrictive materials

“…The development of novel materials exhibiting exceptional strain response in the presence of an external electric field is imperative to the development of tunable electromechanical devices [1][2][3][4][5][6][7][8] . Promising applications involve next-generation transducers 9 , ultra-efficient actuators 1,2,10 , sonars 11 , and low-power logic devices 12 with application spaces in medicine, astronomy, and consumer electronics. Recent discoveries of 'giant' electrostrictors, for example, Gd-doped ceria 8 , and (Nb, Y) doping in bismuth oxide 13 and lanthanum molybdenum oxide 7 , soft nano-composite based on carbon nanotubes (CNT) 14 and liquid crystalline graphene 6 have opened promising applications for superior electromechanical properties, and also as a replacement of leadbased Pb(Ti 1-x Zr x )O 3 (PZT) solid solutions that are widely used in current applications.…”