Proposal for a memory transistor using phase-change and nanosize effects

Hosaka, Sumio; Miyauchi, K.; Tamura, Tomoyuki; Sone, Hayato; Koyanagi, Hajime

doi:10.1016/j.mee.2004.03.044

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…To reduce it, some attempts have been made (see, e.g. [18][19][20]). In our experiments, we investigated Sb-Se bilayer structures as phase change materials with a lower melting temperature than that of GST.…”

Section: Introductionmentioning

confidence: 99%

ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURES

Shiman¹,

Gerbreder²,

Sledevsky³

et al. 2011

Latvian Journal of Physics and Technical Sciences

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Research into the phase change transition (PCT) from amorphous to crystalline state in chalcogenide glass semiconductors is often more associated with large-scale samples. The authors present a micro-scale structural model of the Sb/Se thin films. They have also extended the investigations of photo-and thermostimulated inter-diffusion and PCT effects between two adjacent layers. The results show that the optical and electrical characteristics of such a film change simultaneously. It has been found that the electric conductivity of the films increases 3 times during a PCT process.

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Section: Introductionmentioning

confidence: 99%

ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURES

Shiman¹,

Gerbreder²,

Sledevsky³

et al. 2011

Latvian Journal of Physics and Technical Sciences

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“…Currently, the rapid progress in microelectronics technologies is creating many new devices and is, thus, widening continuously the number of materials involved in device fabrication processes. Particularly, there is sufficient interest in phase change materials, such as In-Sb-Te and Ge-Sb-Te alloys, for their applications in optical and electrical phase-change random access memories (PRAM) [1][2][3]. Among the phase-change materials used for PRAM device applications, Ge 2 Sb 2 Te 5 (GST) has advantageous properties such as high-speed phase transformation and high degree of read-write cyclability without any compositional change between different phases.…”

Section: Introductionmentioning

confidence: 99%

Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma

Min¹,

Kim²,

Kwon³

et al. 2007

JKPS

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This work reports investigations of the etch characteristics and mechanisms for Ge2Sb2Te5 (GST), SiO2 and a photoresist (PR) in a Cl2/Ar inductively coupled plasma. The etch rates were measured as functions of the Cl2/Ar mixing ratio (43 -86 % Ar), the gas pressure (4 -10 mTorr), the source power (400 -700 W), and the bias power (50 -300 W). Langmuir probe diagnostics and 0-dimensional plasma modeling provided information on the plasma parameters and plasma active species. The behavior of the GST etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. The etching behavior of the PR is due to both chemical and physical etch pathway, while the etching behavior of the SiO2 is quite close to that for GST. This can be connected to the effective destruction of Si-O bonds in the thin surface layer by ion bombardment and to the reduction of SiO2 by CxHy radicals resulting from the decomposition of the PR.

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“…Also Ge 2 Sb 2 Te 5 shows large sensing margin which is necessary for nonvolatile memory applications. However, when Ge 2 Sb 2 Te 5 is employed in a nonvolatile memory device, a high reset current (> 1 mA) which leads to high power consumption of a memory device is necessary owing to its high melting temperature and low resistivity (Lai and Lowrey 2001;Horii et al 2003;Ha et al 2003;Hosaka et al 2004;Maimon et al 2003;Maimon et al 2001;Lai 2003). The power consumption of a memory device is proportional to the area of the contact electrode, electrical conductivity and melting temperature of the phase change material.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and crystallization behavior of Sb x Se100−x thin films

et al. 2006

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The structural transformation and transformation kinetics of Sb x Se 100Àx films (60 £ x £ 70) were studied to investigate the feasibility of applying Sb x Se 100Àx alloys in phase-change nonvolatile memories. The temperature-dependent van der Pauw measurements, Hall measurements, X-ray diffraction and a static tester were used to investigate the electrical properties and crystallization behavior of the Sb x Se 100Àx films. The sheet resistance difference between amorphous and crystalline state was higher than 10 4 X per square According to Hall measurement, Sb x Se 100Àx films have p-type conduction and the Hall mobility and carrier concentration increases with the increase in Sb content. The crystalline structure of the metastable phase of Sb x Se 100Àx alloys, which plays a major roll in fast crystallization, is similar to that of Sb 2 Te (rhombohedral structure). The transition temperature, sheet resistance and activation energy for transformation decrease as the amount of Sb increases in the Sb x Se 100Àx film. Applying the Kissinger method, the activation energies for crystallization were in the range from 1.90 ± 0.15 to 4.16 ± 0.28 eV. The desired crystallization speed can be obtained by a systematic change of the composition owing to the variation of the activation barrier with stoichiometry.

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Proposal for a memory transistor using phase-change and nanosize effects

Cited by 4 publications

References 4 publications

ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURES

ELECTRIC CONDUCTIVITY OF Sb/Se THIN FILM MICRO-SCALE STRUCTURES

Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma

Electrical properties and crystallization behavior of Sb x Se100−x thin films

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