Properties of Z1 and Z2 Deep-Level Defects in n-Type Epitaxial and High-Purity Semi-Insulating 4H-SiC
Paweł Kamiński,
Roman Kozłowski,
Jarosław Żelazko
et al.
Abstract:For the first time, the Z1 and Z2 defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material, after switching off the optical trap-filling pulse, either the one-electron or the two-electron thermally stimulated emission from these defects is observed at temperatures 300–400 K. It is found that the former corresponds to the Z10/+ and Z20/+ transitions with t… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.