Properties of the silicon–SiO2 interface

Abstract

The combination of thermally grown oxide on silicon has achieved preeminence in technology because of its remarkable properties. As a result of extensive investigation, many of the properties of the interface are well understood. This article reviews the main lines of evidence for our present understanding. The energy-band relations at the silicon–SiO2 interface have been determined mainly by measurements of internal photoemission. These data can be combined with the results of C–V measurements to give a detailed picture of the behavior of mobile ions in the oxide.

Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

“…However, there have been several prior reports covering the VBO at interfaces between these materials and Si (001). [36][37][38][39][40][41][42][43][44][45] Combining these VBO values with a prior measurement of the VBO at the a-BN:H/Si interface, 11 one can use the rules of transitivity and commutativity to deduce the VBO at a-BN:H interfaces with SiO 2 , Si 3 N 4 , and SiC. 46 The transitivity and commutativity rules for VBOs, respectively, state that Having determined the valence band offsets, the CBOs at the a-BN:H interfaces can now be determined provided the band gaps of the two materials forming the interface are known.…”