Properties of the microwave dielectric phase Ba6−3XNd8+2XTi18O54

Ubic, Rick; Reaney, Ian M.; Lee, William; Samuels, J.; Evangelinos, E.

doi:10.1080/00150199908226141

Cited by 12 publications

(11 citation statements)

References 11 publications

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“…6 The BNT films with a thickness of about 320 nm were grown on Pt/TiO 2 /SiO 2 /Si substrates and also directly on Si (100) substrates by PLD using a KrF excimer laser with a wavelength of 248 nm. Details of the deposition parameters are summarized in Table I.…”

Section: Methodsmentioning

confidence: 99%

“…5 Ubic et al reported that, with increasing x (x ϭ 0.25, 0.5, 0.75), Q was found to increase significantly, and both ε r and τ f decreased. 6 However, the characteristics of BNT thin films have rarely been reported. In this work, we have prepared BNT (x ϭ 0.25) films by pulsed laser deposition (PLD) in order to carry out a preliminary study of the dielectric properties of BNT thin films directed toward possible microwave applications.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric properties of low loss Ba6−3xNd8+2xTi18O54 thin films prepared by pulsed laser deposition for microwave applications

Xia

Shi

et al. 2004

Journal of Elec Materi

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Ba 6-3x Nd 8ϩ2x Ti 18 O 54 with x ϭ 0.25 (BNT-0.25, or simply, BNT) dielectric thin films with a thickness of 320 nm have been prepared on Pt-coated silicon substrates by pulsed laser deposition (PLD) at the substrate temperature of 650°C in 20 Pa oxygen ambient. X-ray analysis showed that the as-deposited films are amorphous and the films remain amorphous after a postannealing at 750°C for 30 min. The dielectric constant of the BNT films has been determined to be about 80 with a low loss tan δ of about 0.006 at 1 MHz. The capacitance-voltage (C-V), capacitance-frequency, and capacitance-temperature characteristics of a BNT capacitor with Pt top electrode were measured. A low leakage-current density of 4 ϫ 10 Ϫ6 A/cm 2 at 6 V was measured, and a preliminary discussion of the leakage-current mechanism is also given. It is proposed that amorphous BNT-0.25 thin films will be a potential dielectric material for microwave applications.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dielectric properties of low loss Ba6−3xNd8+2xTi18O54 thin films prepared by pulsed laser deposition for microwave applications

Xia

Shi

et al. 2004

Journal of Elec Materi

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“…Creation of microwave ceramics with a high dielectric constant (e r ) and good thermo stability together with small dielectric losses in wide temperature and frequency ranges is an actual problem since the application of such materials in the microwave equipment for the need of miniaturization and integration [3,4]. Tungsten-bronze type Bao-Nd 2 O 3 -TiO 2 system with high dielectric constant (e r C 80), low dielectric loss (Q 9 f C 5000), which meet the requirement of microwave materials, has been widely investigated in recent decades [5][6][7][8]. However, the high s f compared to other dielectric materials such as Ba(Zn 1/3 Ta 2/3 )O 3 , Ba(Ta 1/2 Nb 1/2 )O 3 which had near zero temperature coefficient of resonant frequency [1] hindered applications of them in actual production.…”

Section: Introductionmentioning

confidence: 99%

Microwave dielectric properties and microstructure of (Ba0.98Sr0.02)3.75Nd9.5Ti18−x(Zn1/3Nb2/3)xO54 ceramics

Guo

Tang

Chen

et al. 2015

J Mater Sci: Mater Electron

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The microstructure and microwave dielectric characteristics of (Ba 0.98 Sr 0.02 ) 3.75 Nd 9.5 Ti 18-x (Zn 1/3 Nb 2/ 3 ) x O 54 ceramics solid solutions (0 B x B 2.5) were investigated in this study. X-ray diffraction indicated that only BaNd 2 Ti 4 O 12 existed in the sintered samples when x value was lower than 2.0, but subsequently a new phase generated with increasing of x value. The dielectric constant (e r ) of the samples increased slightly from 83.4 to 85.2 before falling down and quality factor value (Q 9 f) declined radically from 10,873 to 1321 GHz at optimum sintering temperature of 1450°C, as x value increased from 0.0 to 2.5. And the temperature coefficient of resonant frequency (s f ) could be adjusted to a minimum value and then rebounded because of the second phase NdNbTiO 6 which also sharply deteriorated the quality factor of the samples. At last, the excellent microwave dielectric properties of the samples with values of e r = 85.2, Q 9 f = 5989 GHz, s f = ?14.9 ppm/°C were obtained as x was 1.0 sintered at 1450°C for 3 h in air.

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“…As a member of Ba 6 À 3x R 8 þ 2x Ti 18 O 54 (BRT, R=La, Pr, Nd, Sm), the high permittivity solid solution family, Ba 4 Nd 9.33 Ti 18 O 54 (x=2/3) ceramic exhibits excellent dielectric constant near 85 [4][5][6]. However, the relatively low Q Â f value about 8200 GHz and high t f of 55 ppm/1C as well as a sintering temperature (T s ) higher than 1380 1C restrict its commercial application.…”

Section: Introductionmentioning

confidence: 99%

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Yao

Lin

Zhao

et al. 2012

Ceramics International

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Properties of the microwave dielectric phase Ba_6−3XNd_8+2XTi₁₈O₅₄

Cited by 12 publications

References 11 publications

Dielectric properties of low loss Ba6−3xNd8+2xTi18O54 thin films prepared by pulsed laser deposition for microwave applications

Dielectric properties of low loss Ba6−3xNd8+2xTi18O54 thin films prepared by pulsed laser deposition for microwave applications

Microwave dielectric properties and microstructure of (Ba0.98Sr0.02)3.75Nd9.5Ti18−x(Zn1/3Nb2/3)xO54 ceramics

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

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