2022
DOI: 10.1016/j.mssp.2022.106626
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Properties of the defect mode of a ternary photonic crystal having an n-doped semiconductor as a defect layer: TE case

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Cited by 8 publications
(3 citation statements)
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“…Figure 3 shows that as the RIX of the analyte increases, the resonant peak position is enhanced. [ 46 ] So, the resonant peak position corresponding to BPS has the highest values. This shift can be explained in light of the Fabry–Perot resonance.…”
Section: Numerical Resultsmentioning
confidence: 99%
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“…Figure 3 shows that as the RIX of the analyte increases, the resonant peak position is enhanced. [ 46 ] So, the resonant peak position corresponding to BPS has the highest values. This shift can be explained in light of the Fabry–Perot resonance.…”
Section: Numerical Resultsmentioning
confidence: 99%
“…The RIXs of the layers are 3.36 (GaAs), 2.0 (Si 3 N 4 ), and 1.2887 (TiN). [46,47] The materials are considered loss free. The thicknesses of the layers are d 1 = 120 nm (GaAs), d 2 = 200 nm (Si 3 N 4 ), and d 3 = 310 nm (TiN).…”
Section: The Pcl As a Sensormentioning
confidence: 99%
“…The properties of the defect mode can be tuned using different parameters. In 2022, Alhamss et al have considered the effect of applying magnetic fields, doping rate, and the wide of n-GaAs layer used as a defect layer in a ternary 1-D PC based on Air/(Si/Bi 4 Ge 3 O 12 /SiO 2 ) 4 /defect/(/(Si/Bi 4 Ge 3 O 12 /SiO 2 ) 4 /Air and they demonstrated that the thickness of the defect layer is the most important parameters in control of the defect mode properties 17 . In 2022, Biswal et al have investigated a 1-D semiconductor ternary PC with a complex unit cell and shown that the configuration can be used for designing optical wide−band filters, omnidirectional reflectors at the infrared and terahertz regimes 18 .…”
Section: Introductionmentioning
confidence: 99%