Properties of sputtered nitride semiconductors

Tansley, T.L.; Egan, Renate; Horrigan, E.C.

doi:10.1016/0040-6090(88)90174-5

Cited by 46 publications

(15 citation statements)

References 17 publications

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“…There have been several early reports on the growth of GaN films by reactive sputtering of Ga target with nitrogen or nitrogenargon mixture, [21][22][23] though problems of reproducibility arising out of the low melting temperature of gallium have been reported. 24 During the past few years, polycrystalline GaN films have been deposited by sputtering using Ga, [25][26][27][28] GaN, [29][30][31][32][33][34] or GaAs ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

“…1,8 However, owing to their enormous application potential, there has recently been increasing interest in polycrystalline GaN films grown by MBE, [9][10][11][12][13][14] MOCVD, [15][16][17][18] and sputtering. [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Polycrystalline, 19 nanocrystalline, 20 and amorphous 37 GaN have also shown good luminescence characteristics. Applications of polycrystalline GaN films have been demonstrated in LEDs, 38,39 white lighting, 39 UV photodetectors, 40 solar cells, 41,42 thin film transistors, 43,44 and field electron emitters, 16,45 and suitability of GaN films for application in large area flat panel displays has also been explored.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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Properties of InxGa1−xN films in terahertz range Appl. Phys. Lett. 100, 071913 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems Appl. Phys. Lett. 100, 051110 (2012) High-Q optomechanical GaAs nanomembranes Appl. Phys. Lett. 99, 243102 (2011) Mg-induced terahertz transparency of indium nitride films Appl. Phys. Lett. 99, 232117 (2011) Additional information on J. Appl. Phys. GaN films have been deposited by reactive rf sputtering of GaAs target in 100% nitrogen ambient on quartz substrates at different substrate temperatures ranging from room temperature to 700°C. A series of films, from arsenic-rich amorphous to nearly arsenic-free polycrystalline hexagonal GaN, has been obtained. The films have been characterized by phase modulated spectroscopic ellipsometry to obtain the optical parameters, viz., fundamental band gap, refractive index, and extinction coefficient, and to understand their dependence on composition and microstructure. A generalized optical dispersion model has been used to carry out the ellipsometric analysis for amorphous and polycrystalline GaN films and the variation of the optical parameters of the films has been studied as a function of substrate temperature. The refractive index values of polycrystalline films with preferred orientation of crystallites are slightly higher ͑2.2͒ compared to those for amorphous and randomly oriented films. The dominantly amorphous GaN film shows a band gap of 3.47 eV, which decreases to 3.37 eV for the strongly c-axis oriented polycrystalline film due to the reduction in amorphous phase content with increase in substrate temperature.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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“…Most of them are polycrystalline [3][4][5][6][7][8][9] or amorphous, 10 although epitaxial GaN films have been reported to be prepared by reactive sputtering. 11,12 It is important to control the properties of films according to the device application by changing the sputtering conditions.…”

Section: Introductionmentioning

confidence: 99%

Properties of radio-frequency-sputter-deposited GaN films in a nitrogen∕hydrogen mixed gas

Miyazaki¹,

Takada²,

Adachi³

et al. 2005

Journal of Applied Physics

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GaN films have been deposited by reactive sputtering in nitrogen gas at pressures from 0.08 to 2.70 Pa with and without the addition of hydrogen gas. X-ray diffraction (XRD), Fourier transform infrared (FTIR), optical absorption, and photoluminescence (PL) spectroscopy have been used to characterize the sputter-deposited GaN films. The XRD pattern reveals that the GaN films deposited in nitrogen gas at pressures lower than 0.53 Pa are polycrystals with the (0001) texture (α-GaN), while those deposited at or above 1.07 Pa display mixed crystalline orientations or an amorphous-like nature. The GaN:H films deposited in nitrogen∕hydrogen mixed gas, on the other hand, show an amorphous or amorphous-like nature. The FTIR spectra indicate that the GaN:H films show peaks arising from hydrogen-related bonds at ∼1000 and ∼3200cm−1, in addition to the GaN absorption band at ∼555cm−1. The optical absorption spectra at 300 K indicate the fundamental absorption edges at ∼3.38 and ∼3.7eV for the highly oriented α-GaN and amorphous GaN:H films, respectively. PL emission has been observed from sputter-deposited α-GaN films at temperatures below 100 K. The GaN:H films also show strong band-edge and donor-acceptor pair emissions. The PL emission in the GaN:H film may arise from crystalline GaN particles embedded in the amorphous GaN matrix.

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“…The remarkable growth in the optoelectronic industry is attributed to group III-nitride compound semiconductors such as GaN, AlN, and InN. [1][2][3][4][5][6] Due to the wide bandgap nature and the piezoelectric properties of AlN and GaN 7,8 and the high electron mobility and small bandgap of InN, 9 significant interest in the fabrication of these materials is palpable.The exploitation of the full potential of the group III-nitride compound semiconductors in the emerging optoelectronic technologies such as deep ultraviolet DUV light emitting diodes LEDs, surface acoustic wave sensors (SAWs), RF filters in MEMS technologies etc., faces major challenges namely the lack of or the high cost of high crystalline quality material. Although bulk group III-nitride wafers are excessively expensive, only 2-4 inch bulk GaN wafers are commercially available.…”

mentioning

confidence: 99%

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confidence: 99%

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Mamun

Tapily

Moutanabbir

et al. 2018

ECS J. Solid State Sci. Technol.

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The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split and transfer a variety of semiconductors. With this perspective, hydrogen-implanted AlN samples were annealed in air at temperatures ranging from 300 • C to 600 • C for 5 min to study the influence of pre-layer splitting treatments on the nanomechanical properties. There is a clear dependence of the hardness on implanted hydrogen implantation fluence. We observe that the as-implanted hardness increased from 18 GPa for the virgin reference sample to ∼25 GPa for the highest fluence of 3 × 10 17 H cm −2 prior to annealing. In the case of reference single crystalline Si samples, a significant drop in the hardness and elastic modulus is observed in the H implantation-induced damage zone subsequent to thermal annealing , while for crystalline epitaxial AlN samples with 0.5 × 10 17 and 2.0 × 10 17 H implant fluences, the hardness increases and peaks until the thermal annealing temperature reaches 350 • C and subsequently begins to drop thereafter for higher annealing temperatures. However, for the 1.0 × 10 17 H implantation fluence the hardness continues to increase with increasing thermal annealing temperature. The remarkable growth in the optoelectronic industry is attributed to group III-nitride compound semiconductors such as GaN, AlN, and InN. [1][2][3][4][5][6] Due to the wide bandgap nature and the piezoelectric properties of AlN and GaN 7,8 and the high electron mobility and small bandgap of InN, 9 significant interest in the fabrication of these materials is palpable.The exploitation of the full potential of the group III-nitride compound semiconductors in the emerging optoelectronic technologies such as deep ultraviolet DUV light emitting diodes LEDs, surface acoustic wave sensors (SAWs), RF filters in MEMS technologies etc., faces major challenges namely the lack of or the high cost of high crystalline quality material. Although bulk group III-nitride wafers are excessively expensive, only 2-4 inch bulk GaN wafers are commercially available. In general, due to its high thermal stability, single crystal sapphire substrates are used for the epitaxial growth of group III-nitride layers. Due to lattice and thermal mismatch between the III-N semiconductor materials and growth on substrates such as sapphire, it is documented that the grown layers tend to be defective with misfit dislocations. Reducing interfacial defect density requires the growth of very thick layers which is a very lengthy process. Bulk wafers are obtained from these thick layers. In order to reduce the cost of these bulk materials one approach would be to implement the ion-cut process. [10][11][12] The ion-cut process, which is based on ion (H and/or He) implantation and wafer bonding, is used to transfer crystalline layers onto substrates that produce heterostructures that cannot be produced by other...

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Properties of sputtered nitride semiconductors

Cited by 46 publications

References 17 publications

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Properties of radio-frequency-sputter-deposited GaN films in a nitrogen∕hydrogen mixed gas

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

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