Properties of silicon-metal contacts versus metal work-function, silicon impurity concentration and bias voltage

Abstract

A preceding quantum and electronic theory of the metal-semiconductor interface is used to compute several physical quantities of contacts between silicon and various metals. The parameters of the contacts, such as the energy barrier heights, the electric field at the interface, the abscissa of the energy barrier peak, the depletion layer width, the interfacial dipole contribution to the energy barrier, the capacitance built-in-voltage and so on, are computed as functions of the metal work-function, of the silicon Fermi level and of the voltage biasing the contact. The theoretical values obtained prove to be in agreement with the published experimental results.

Synthesis of Ag Nanostructures by Photochemical Reduction Using Citrate-Capped Pt Seeds

“…During the growth of Ag nanostructures, once the reduced Ag atoms bind to the surface of a Pt seed, the Pt seed becomes a particle partially coated with Ag. Due to the fact that Pt has a much higher work function than Ag, the coated Ag on Pt seed is more reducing than the Pt seed [23]. This means that Ag + ions are more likely to be reduced at the coated Ag on the polar particle.…”

Metal contacts to oxygen-contaminated silicon surfaces

“…However, the attenuation lengths of these wave-function tails are too short to explain such large barrier height differences. The calculations of Pellegrini (1976), which predict significant differences between $CV and for intimate metal-silicon contacts, cannot be used to account for the very large differences observed.…”

Fabrication of low-cost, large-area prototype Si(Li) detectors for the GAPS experiment

“…Many typical Si(Li) fabrication procedures use Au for Schottky barrier contact, but we have found that Au is too soft and scratches very easily. We have chosen Ni as the p-side contact, as it has a similar work function and surface barrier height as Au on Si [36,37], but is much cheaper and more durable. This thick, rugged contact is necessary to prevent puncturing or scratching of any thin p-side barrier, which would ruin the detector as described in Sec.…”