Properties of Si:H thin films deposited by rf-PECVD of silane–argon mixtures with variation of the plasma condition

Nanocrystalline silicon TFT process using silane diluted in argon–hydrogen mixtures

“…In the past, some research has been carried out to investigate the effect of Ar dilution on deposition of amorphous and microcrystalline silicon by PECVD [4][5][6][7][8][9]. In this paper, we investigate the effect of Ar dilution on the deposition process of nc-Si:H deposited by PECVD, in the continuity of our previous works [10].…”

“…One way to explain these results is to consider the role played by the metastable states (Ar * ) of excited Ar atoms generated within the discharge [4][5][6][7][8][9]. With a lifetime of about 1 s and an energy level of 11.55 eV, the Ar * species could act like an energy tank and induce neutral reactions with chemically reactive molecules.…”

Undoped and arsenic-doped low temperature (∼165°C) microcrystalline silicon for electronic devices process

“…One way to explain these results is to consider the role played by the metastable states (Ar * ) of excited Ar atoms generated within the discharge [6][7][8]. Owing to a lifetime of about 1 s and an energy level of 11.55 eV, the Ar * species could act like an energy tank and induce neutral reactions with chemically reactive molecules [9].…”

Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

“…Whereas, considerably low deposition rate of films prepared using high hydrogen dilution of SiH 4 [3] puts a question towards cost-effectiveness of these films, columnar growth of argon dilution films [4,5] reduces the usefulness. Very high hydrogen and argon dilution further results in the polycrystalline/microcrystalline films [6][7][8].…”