Properties of Semipolar GaN Grown on a Si(100) Substrate

Бессолов, В. Н.; Konenkova, E. V.; Orlova, T. S.; Rodin, S. N.; Seredova, N. V.; Solomnikova, Anna; Shcheglov, M. P.; Kibalov, D. S.; Smirnov, V. K.

doi:10.1134/s1063782619070054

Cited by 6 publications

(2 citation statements)

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“…14 Even for GaN LEDs grown on Si or metal substrates with high electrical and thermal conductivities, the lattice mismatch and thermal expansion coefficients between GaN and its substrates lead to high dislocation and crack densities in the epitaxial layers. 15,16 Thus, the transfer of LED structures grown on sapphire onto a more suitable carrier (e.g., Cu foil with a thermal conductivity of up to 300 W/mK) has become a way to go to yield optimum device performance. 17 Laser lift-off (LLO) is a method that is proven to be fast and nonchemical for removing the thin GaN layer stack from the sapphire substrate and then transferring it onto a potential foreign carrier substrate.…”

Section: Introductionmentioning

confidence: 99%

“…However, they exhibit poor electrical and thermal conductivities (∼35 W/mK) . Even for GaN LEDs grown on Si or metal substrates with high electrical and thermal conductivities, the lattice mismatch and thermal expansion coefficients between GaN and its substrates lead to high dislocation and crack densities in the epitaxial layers. , Thus, the transfer of LED structures grown on sapphire onto a more suitable carrier (e.g., Cu foil with a thermal conductivity of up to 300 W/mK) has become a way to go to yield optimum device performance …”

Section: Introductionmentioning

confidence: 99%

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Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips

Yulianto

Kadja

Bornemann

et al. 2021

ACS Appl. Electron. Mater.

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Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser pulses, exploiting nonlinear absorption rather than single-photon absorption such as in conventional laser lift-off (LLO) employing excimer or Q-switched laser sources. The focus of this study is to investigate the influence of laser scanning speed and integrated fluence corresponding to laser energy per area during the LLO processing of GaN LED chips and their resulting structural properties. Because both the sapphire substrate and InGaN/GaN heterostructures are fully transparent to the emission of the laser system, a key question is related to the impact of laser pulses on the quality of a thin film structure. Therefore, several characterization methods (i.e., scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electroluminescence spectroscopy) were employed to understand the material modifications made by femtosecond LLO (fs-LLO). We demonstrated that by adjusting the laser scanning speed, smooth GaN surfaces and good crystal quality could be obtained regardless of the existing delamination of metal contact, which then slightly downgraded the LED performance. Here, the integrated fluence level was set in the range of 2.6–4.4 J/cm2 to enable the fs-LLO process. Moreover, two mitigation strategies were developed and proven to improve the optoelectrical characteristics of the lifted-off LEDs (i.e., modification of the processing step related to the metal creation and reduction of laser energy).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips

Yulianto

Kadja

Bornemann

et al. 2021

ACS Appl. Electron. Mater.

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The growth of hexagonal and cubic GaN on a nano-patterned Si(100) substrate

Бессолов

Konenkova

Konenkov

et al. 2020

J. Phys.: Conf. Ser.

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The results of studies of semipolar GaN(10-12) layers synthesized on a nano-patterned Si(100) substrate are presented. It is shown that in the method metalorganic vapor phase epitaxy, the use of a nanorelief consisting of V-shape groove with inclined faces close to the Si(111) plane can lead to the formation of regions of cubic gallium nitride in the nano-groove. Model of the origin of the cubic phase are based on the formation of AlN nuclei in (0001) and (10-10) nano-groove and the conjugation of the AlN(10-10) and c-GaN planes by the “magic mismatch” mechanism.

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